Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors

Chih Yang Chang, E. A. Douglas, Jinhyung Kim, Liu Lu, Chien Fong Lo, Byung Hwan Chu, D. J. Cheney, B. P. Gila, F. Ren, G. D. Via, David A. Cullen, Lin Zhou, David Smith, Soohwan Jang, S. J. Pearton

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.10.17 μ), drain bias voltage, and source/draingate contact distance. Devices with different gate lengths and gatedrain distances were found to exhibit the onset of degradation at different sourcedrain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.

Original languageEnglish (US)
Article number5678846
Pages (from-to)187-193
Number of pages7
JournalIEEE Transactions on Device and Materials Reliability
Volume11
Issue number1
DOIs
StatePublished - Mar 1 2011

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Keywords

  • AlGaN
  • GaN
  • degradation
  • high-electron mobility transistor (HEMT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this

Chang, C. Y., Douglas, E. A., Kim, J., Lu, L., Lo, C. F., Chu, B. H., Cheney, D. J., Gila, B. P., Ren, F., Via, G. D., Cullen, D. A., Zhou, L., Smith, D., Jang, S., & Pearton, S. J. (2011). Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors. IEEE Transactions on Device and Materials Reliability, 11(1), 187-193. [5678846]. https://doi.org/10.1109/TDMR.2010.2103314