Electric and magnetic field study of spacer layer thickness effects in AlGaAs/InGaAs resonant tunneling diodes

Hyungmo Yoo, Stephen Goodnick, John R. Arthur

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Pseudomorphic Al.35Ga.65As/In.1Ga.9As resonant tunneling diodes fabricated with asymmetric spacer layers adjacent to the tunnel barrier were characterized via magneto-transport measurements. Novel tunneling effects (ground vs excited state tunneling) were observed in the current-voltage characteristics of these devices which depend upon the bias direction. Shubnikov-de Haas oscillations obtained at high magnetic fields show a strong asymmetry with bias direction and give evidence of silicon dopant out diffusion during molecular beam epitaxy.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGottfried H. Dohler, Emil S. Koteles, Joel N. Schulman
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Pages45-53
Number of pages9
Volume1283
ISBN (Print)0819403342
StatePublished - 1990
Externally publishedYes
EventQuantum-Well and Superlattice Physics III - San Diego, CA, USA
Duration: Mar 18 1990Mar 19 1990

Other

OtherQuantum-Well and Superlattice Physics III
CitySan Diego, CA, USA
Period3/18/903/19/90

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Yoo, H., Goodnick, S., & Arthur, J. R. (1990). Electric and magnetic field study of spacer layer thickness effects in AlGaAs/InGaAs resonant tunneling diodes. In G. H. Dohler, E. S. Koteles, & J. N. Schulman (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1283, pp. 45-53). Publ by Int Soc for Optical Engineering.