Electric and magnetic field study of spacer layer thickness effects in AlGaAs/InGaAs resonant tunneling diodes

Hyungmo Yoo; Stephen Goodnick; John R. Arthur

Electric and magnetic field study of spacer layer thickness effects in AlGaAs/InGaAs resonant tunneling diodes

Hyungmo Yoo, Stephen Goodnick, John R. Arthur

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Pseudomorphic Al_.35Ga_.65As/In_.1Ga_.9As resonant tunneling diodes fabricated with asymmetric spacer layers adjacent to the tunnel barrier were characterized via magneto-transport measurements. Novel tunneling effects (ground vs excited state tunneling) were observed in the current-voltage characteristics of these devices which depend upon the bias direction. Shubnikov-de Haas oscillations obtained at high magnetic fields show a strong asymmetry with bias direction and give evidence of silicon dopant out diffusion during molecular beam epitaxy.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Gottfried H. Dohler, Emil S. Koteles, Joel N. Schulman
Place of Publication	Bellingham, WA, United States
Publisher	Publ by Int Soc for Optical Engineering
Pages	45-53
Number of pages	9
Volume	1283
ISBN (Print)	0819403342
State	Published - 1990
Externally published	Yes
Event	Quantum-Well and Superlattice Physics III - San Diego, CA, USA Duration: Mar 18 1990 → Mar 19 1990

Other

Other	Quantum-Well and Superlattice Physics III
City	San Diego, CA, USA
Period	3/18/90 → 3/19/90

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

Electric and magnetic field study of spacer layer thickness effects in AlGaAs/InGaAs resonant tunneling diodes. / Yoo, Hyungmo; Goodnick, Stephen; Arthur, John R.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Gottfried H. Dohler; Emil S. Koteles; Joel N. Schulman. Vol. 1283 Bellingham, WA, United States: Publ by Int Soc for Optical Engineering, 1990. p. 45-53.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yoo, H, Goodnick, S & Arthur, JR 1990, Electric and magnetic field study of spacer layer thickness effects in AlGaAs/InGaAs resonant tunneling diodes. in GH Dohler, ES Koteles & JN Schulman (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1283, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 45-53, Quantum-Well and Superlattice Physics III, San Diego, CA, USA, 3/18/90.

Yoo, Hyungmo ; Goodnick, Stephen ; Arthur, John R. / Electric and magnetic field study of spacer layer thickness effects in AlGaAs/InGaAs resonant tunneling diodes. Proceedings of SPIE - The International Society for Optical Engineering. editor / Gottfried H. Dohler ; Emil S. Koteles ; Joel N. Schulman. Vol. 1283 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1990. pp. 45-53

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abstract = "Pseudomorphic Al.35Ga.65As/In.1Ga.9As resonant tunneling diodes fabricated with asymmetric spacer layers adjacent to the tunnel barrier were characterized via magneto-transport measurements. Novel tunneling effects (ground vs excited state tunneling) were observed in the current-voltage characteristics of these devices which depend upon the bias direction. Shubnikov-de Haas oscillations obtained at high magnetic fields show a strong asymmetry with bias direction and give evidence of silicon dopant out diffusion during molecular beam epitaxy.",

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booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Quantum-Well and Superlattice Physics III ; Conference date: 18-03-1990 Through 19-03-1990",

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AU - Goodnick, Stephen

AU - Arthur, John R.

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N2 - Pseudomorphic Al.35Ga.65As/In.1Ga.9As resonant tunneling diodes fabricated with asymmetric spacer layers adjacent to the tunnel barrier were characterized via magneto-transport measurements. Novel tunneling effects (ground vs excited state tunneling) were observed in the current-voltage characteristics of these devices which depend upon the bias direction. Shubnikov-de Haas oscillations obtained at high magnetic fields show a strong asymmetry with bias direction and give evidence of silicon dopant out diffusion during molecular beam epitaxy.

AB - Pseudomorphic Al.35Ga.65As/In.1Ga.9As resonant tunneling diodes fabricated with asymmetric spacer layers adjacent to the tunnel barrier were characterized via magneto-transport measurements. Novel tunneling effects (ground vs excited state tunneling) were observed in the current-voltage characteristics of these devices which depend upon the bias direction. Shubnikov-de Haas oscillations obtained at high magnetic fields show a strong asymmetry with bias direction and give evidence of silicon dopant out diffusion during molecular beam epitaxy.

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AN - SCOPUS:0025626332

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BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Dohler, Gottfried H.

A2 - Koteles, Emil S.

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PB - Publ by Int Soc for Optical Engineering

CY - Bellingham, WA, United States

T2 - Quantum-Well and Superlattice Physics III

Y2 - 18 March 1990 through 19 March 1990

ER -

Electric and magnetic field study of spacer layer thickness effects in AlGaAs/InGaAs resonant tunneling diodes

Abstract

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ASJC Scopus subject areas

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