Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

M. J. Gilbert, D. K. Ferry

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

A quantum mechanical method was developed to calculate ballistic transport in fully-depleted silicon-on-insulator MOSFET devices. The position of the dopant atoms has a significant effect on the resultant device characteristics. Each dopant configurations becomes exceedingly important for quantum simulations. It is observed that the positions of the dopants in the source and the drain cause pools of electron density to form.

Original languageEnglish (US)
Pages (from-to)7954-7960
Number of pages7
JournalJournal of Applied Physics
Volume95
Issue number12
DOIs
StatePublished - Jun 15 2004

Fingerprint

metal oxide semiconductors
ballistics
field effect transistors
insulators
silicon
causes
configurations
atoms
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors. / Gilbert, M. J.; Ferry, D. K.

In: Journal of Applied Physics, Vol. 95, No. 12, 15.06.2004, p. 7954-7960.

Research output: Contribution to journalArticle

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