Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

M. J. Gilbert; D. K. Ferry

doi:10.1063/1.1699496

Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

M. J. Gilbert, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

A quantum mechanical method was developed to calculate ballistic transport in fully-depleted silicon-on-insulator MOSFET devices. The position of the dopant atoms has a significant effect on the resultant device characteristics. Each dopant configurations becomes exceedingly important for quantum simulations. It is observed that the positions of the dopants in the source and the drain cause pools of electron density to form.

Original language	English (US)
Pages (from-to)	7954-7960
Number of pages	7
Journal	Journal of Applied Physics
Volume	95
Issue number	12
DOIs	https://doi.org/10.1063/1.1699496
State	Published - Jun 15 2004

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1699496

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title = "Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors",

abstract = "A quantum mechanical method was developed to calculate ballistic transport in fully-depleted silicon-on-insulator MOSFET devices. The position of the dopant atoms has a significant effect on the resultant device characteristics. Each dopant configurations becomes exceedingly important for quantum simulations. It is observed that the positions of the dopants in the source and the drain cause pools of electron density to form.",

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AB - A quantum mechanical method was developed to calculate ballistic transport in fully-depleted silicon-on-insulator MOSFET devices. The position of the dopant atoms has a significant effect on the resultant device characteristics. Each dopant configurations becomes exceedingly important for quantum simulations. It is observed that the positions of the dopants in the source and the drain cause pools of electron density to form.

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Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

Abstract

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