Efficient modeling of PIN diode switches employing time-domain electromagnetic-physics-based simulators

Yasser A. Hussein, Samir M. El-Ghazaly, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents an efficient full-wave time-domain simulator for accurate modeling of PIN diode switches. An equivalent circuit of the PIN diode is extracted under different bias conditions using a drift-diffusion physical model. Net recombination is modeled using a Shockley-Read-Hall process, while generation is assumed to be dominated by impact ionization. The device physics is coupled to Maxwell's equations using extended-FDTD formulism. A complete set of results is presented for the on and off states of the PIN switch. The results are validated through comparison with independent measurements, where good agreement is observed. Using this modeling approach, it is demonstrated that one can efficiently optimize PIN switches for better performance.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
Pages325-328
Number of pages4
Volume2005
DOIs
StatePublished - 2005
Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
Duration: Jun 12 2005Jun 17 2005

Other

Other2005 IEEE MTT-S International Microwave Symposium
CountryUnited States
CityLong Beach, CA
Period6/12/056/17/05

Fingerprint

Time switches
simulators
Diodes
switches
Physics
Simulators
diodes
Switches
electromagnetism
physics
Impact ionization
Maxwell equations
equivalent circuits
finite difference time domain method
Equivalent circuits
Maxwell equation
ionization

Keywords

  • Device transport physics
  • Global modeling
  • Maxwell's equations
  • PIN diode switches

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Hussein, Y. A., El-Ghazaly, S. M., & Goodnick, S. (2005). Efficient modeling of PIN diode switches employing time-domain electromagnetic-physics-based simulators. In IEEE MTT-S International Microwave Symposium Digest (Vol. 2005, pp. 325-328). [1516592] https://doi.org/10.1109/MWSYM.2005.1516592

Efficient modeling of PIN diode switches employing time-domain electromagnetic-physics-based simulators. / Hussein, Yasser A.; El-Ghazaly, Samir M.; Goodnick, Stephen.

IEEE MTT-S International Microwave Symposium Digest. Vol. 2005 2005. p. 325-328 1516592.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hussein, YA, El-Ghazaly, SM & Goodnick, S 2005, Efficient modeling of PIN diode switches employing time-domain electromagnetic-physics-based simulators. in IEEE MTT-S International Microwave Symposium Digest. vol. 2005, 1516592, pp. 325-328, 2005 IEEE MTT-S International Microwave Symposium, Long Beach, CA, United States, 6/12/05. https://doi.org/10.1109/MWSYM.2005.1516592
Hussein YA, El-Ghazaly SM, Goodnick S. Efficient modeling of PIN diode switches employing time-domain electromagnetic-physics-based simulators. In IEEE MTT-S International Microwave Symposium Digest. Vol. 2005. 2005. p. 325-328. 1516592 https://doi.org/10.1109/MWSYM.2005.1516592
Hussein, Yasser A. ; El-Ghazaly, Samir M. ; Goodnick, Stephen. / Efficient modeling of PIN diode switches employing time-domain electromagnetic-physics-based simulators. IEEE MTT-S International Microwave Symposium Digest. Vol. 2005 2005. pp. 325-328
@inproceedings{088006ed43854fada7d832d416821b13,
title = "Efficient modeling of PIN diode switches employing time-domain electromagnetic-physics-based simulators",
abstract = "This paper presents an efficient full-wave time-domain simulator for accurate modeling of PIN diode switches. An equivalent circuit of the PIN diode is extracted under different bias conditions using a drift-diffusion physical model. Net recombination is modeled using a Shockley-Read-Hall process, while generation is assumed to be dominated by impact ionization. The device physics is coupled to Maxwell's equations using extended-FDTD formulism. A complete set of results is presented for the on and off states of the PIN switch. The results are validated through comparison with independent measurements, where good agreement is observed. Using this modeling approach, it is demonstrated that one can efficiently optimize PIN switches for better performance.",
keywords = "Device transport physics, Global modeling, Maxwell's equations, PIN diode switches",
author = "Hussein, {Yasser A.} and El-Ghazaly, {Samir M.} and Stephen Goodnick",
year = "2005",
doi = "10.1109/MWSYM.2005.1516592",
language = "English (US)",
isbn = "0780388461",
volume = "2005",
pages = "325--328",
booktitle = "IEEE MTT-S International Microwave Symposium Digest",

}

TY - GEN

T1 - Efficient modeling of PIN diode switches employing time-domain electromagnetic-physics-based simulators

AU - Hussein, Yasser A.

AU - El-Ghazaly, Samir M.

AU - Goodnick, Stephen

PY - 2005

Y1 - 2005

N2 - This paper presents an efficient full-wave time-domain simulator for accurate modeling of PIN diode switches. An equivalent circuit of the PIN diode is extracted under different bias conditions using a drift-diffusion physical model. Net recombination is modeled using a Shockley-Read-Hall process, while generation is assumed to be dominated by impact ionization. The device physics is coupled to Maxwell's equations using extended-FDTD formulism. A complete set of results is presented for the on and off states of the PIN switch. The results are validated through comparison with independent measurements, where good agreement is observed. Using this modeling approach, it is demonstrated that one can efficiently optimize PIN switches for better performance.

AB - This paper presents an efficient full-wave time-domain simulator for accurate modeling of PIN diode switches. An equivalent circuit of the PIN diode is extracted under different bias conditions using a drift-diffusion physical model. Net recombination is modeled using a Shockley-Read-Hall process, while generation is assumed to be dominated by impact ionization. The device physics is coupled to Maxwell's equations using extended-FDTD formulism. A complete set of results is presented for the on and off states of the PIN switch. The results are validated through comparison with independent measurements, where good agreement is observed. Using this modeling approach, it is demonstrated that one can efficiently optimize PIN switches for better performance.

KW - Device transport physics

KW - Global modeling

KW - Maxwell's equations

KW - PIN diode switches

UR - http://www.scopus.com/inward/record.url?scp=33749264102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749264102&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2005.1516592

DO - 10.1109/MWSYM.2005.1516592

M3 - Conference contribution

AN - SCOPUS:33749264102

SN - 0780388461

SN - 9780780388468

VL - 2005

SP - 325

EP - 328

BT - IEEE MTT-S International Microwave Symposium Digest

ER -