Efficient coupling of Monte Carlo and level set methods for topography simulation

O. Ertl, C. Heitzinger, S. Selberherr

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We have developed a topography simulation method which combines advanced level set techniques for surface evolution with Monte Carlo flux calculation. The result is an algorithm with an overall complexity and storage requirement scaling like O(NlogN) with surface disretization. The calculation of particle trajectories is highly optimized, since spatial partitioning is used to accelerate ray tracing. The method is demonstrated on Si etching in SF 6/O2 plasma.

Original languageEnglish (US)
Title of host publication2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
PublisherSpringer-Verlag Wien
Pages417-420
Number of pages4
ISBN (Print)9783211728604
DOIs
StatePublished - 2007
Event12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria
Duration: Sep 25 2007Sep 27 2007

Publication series

Name2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Other

Other12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
CountryAustria
CityVienna
Period9/25/079/27/07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Modeling and Simulation

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