Abstract
The modular multilevel converter (MMC) is the most promising converter topology for medium- and high-power applications. One of the main concerns in the operation of the MMC, particularly for high-power applications, is its efficiency, which should be maximized. Silicon Carbide (SiC)-based devices have the potential to provide significant efficiency improvement compared with silicon devices. However, the possibility and impact of using SiC-based devices instead of silicon devices for high-power conversion have not been thoroughly explored. This paper reports on the results obtained from a detailed study to evaluate the performance of MMCs based on medium-voltage SiC MOSFETs and diodes with hybrid MMCs that employ silicon IGBTs and SiC diodes. The results are based on detailed circuit simulations that use simple physics-based circuit models. The study suggests the potential for significant efficiency gain for MMCs based on SiC power devices.
Original language | English (US) |
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Article number | 6985656 |
Pages (from-to) | 286-293 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 62 |
Issue number | 2 |
DOIs | |
State | Published - Feb 1 2015 |
Keywords
- Efficiency
- Loss analysis
- Modular multilevel converter (MMC)
- SiC MOSFET
- Silicon IGBT
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering