Abstract
This chapter will discuss widely studied but still debated topic in GaInN/GaN light emitting diodes (LEDs): efficiency droop. Efficiency droop refers to the reduction of efficiency with increasing current (current droop) or temperature (thermal droop). Two of the most recognized mechanisms are proposed to explain the origin of the efficiency droop, that is, Auger recombination and carrier leakage. Experimental data and theoretical simulations are provided to support each mechanism. The efficiency droop in c-plane GaInN/GaN LEDs is exacerbated due to the polarization effect. To solve this issue, very low-droop blue GaInN/GaN LEDs have been realized on semipolar and nonpolar GaN substrates with reduced or eliminated polarization effects. A modified ABC model is developed to characterize the droop performance of both c-plane and nonpolar/semipolar GaInN/GaN LEDs.
| Original language | English (US) |
|---|---|
| Title of host publication | Nitride Semiconductor Light-Emitting Diodes (LEDs) |
| Subtitle of host publication | Materials, Technologies, and Applications: Second Edition |
| Publisher | Elsevier |
| Pages | 299-325 |
| Number of pages | 27 |
| ISBN (Electronic) | 9780081019436 |
| ISBN (Print) | 9780081019429 |
| DOIs | |
| Publication status | Published - Oct 24 2017 |
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Keywords
- Auger recombination
- Carrier leakage
- Efficiency droop
- Light emitting diodes
- Nonpolar
- Polarization
- Semipolar
- Thermal droop
ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)