Efficiency droop in GaInN/GaN LEDs

Houqiang Fu, Yuji Zhao

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

This chapter will discuss widely studied but still debated topic in GaInN/GaN light emitting diodes (LEDs): efficiency droop. Efficiency droop refers to the reduction of efficiency with increasing current (current droop) or temperature (thermal droop). Two of the most recognized mechanisms are proposed to explain the origin of the efficiency droop, that is, Auger recombination and carrier leakage. Experimental data and theoretical simulations are provided to support each mechanism. The efficiency droop in c-plane GaInN/GaN LEDs is exacerbated due to the polarization effect. To solve this issue, very low-droop blue GaInN/GaN LEDs have been realized on semipolar and nonpolar GaN substrates with reduced or eliminated polarization effects. A modified ABC model is developed to characterize the droop performance of both c-plane and nonpolar/semipolar GaInN/GaN LEDs.

Original languageEnglish (US)
Title of host publicationNitride Semiconductor Light-Emitting Diodes (LEDs)
Subtitle of host publicationMaterials, Technologies, and Applications: Second Edition
PublisherElsevier
Pages299-325
Number of pages27
ISBN (Electronic)9780081019436
ISBN (Print)9780081019429
DOIs
StatePublished - Oct 24 2017

Fingerprint

Light emitting diodes
Polarization
Substrates
Temperature

Keywords

  • Auger recombination
  • Carrier leakage
  • Efficiency droop
  • Light emitting diodes
  • Nonpolar
  • Polarization
  • Semipolar
  • Thermal droop

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Fu, H., & Zhao, Y. (2017). Efficiency droop in GaInN/GaN LEDs. In Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications: Second Edition (pp. 299-325). Elsevier. https://doi.org/10.1016/B978-0-08-101942-9.00009-5

Efficiency droop in GaInN/GaN LEDs. / Fu, Houqiang; Zhao, Yuji.

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications: Second Edition. Elsevier, 2017. p. 299-325.

Research output: Chapter in Book/Report/Conference proceedingChapter

Fu, H & Zhao, Y 2017, Efficiency droop in GaInN/GaN LEDs. in Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications: Second Edition. Elsevier, pp. 299-325. https://doi.org/10.1016/B978-0-08-101942-9.00009-5
Fu H, Zhao Y. Efficiency droop in GaInN/GaN LEDs. In Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications: Second Edition. Elsevier. 2017. p. 299-325 https://doi.org/10.1016/B978-0-08-101942-9.00009-5
Fu, Houqiang ; Zhao, Yuji. / Efficiency droop in GaInN/GaN LEDs. Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications: Second Edition. Elsevier, 2017. pp. 299-325
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