Abstract
This chapter will discuss widely studied but still debated topic in GaInN/GaN light emitting diodes (LEDs): efficiency droop. Efficiency droop refers to the reduction of efficiency with increasing current (current droop) or temperature (thermal droop). Two of the most recognized mechanisms are proposed to explain the origin of the efficiency droop, that is, Auger recombination and carrier leakage. Experimental data and theoretical simulations are provided to support each mechanism. The efficiency droop in c-plane GaInN/GaN LEDs is exacerbated due to the polarization effect. To solve this issue, very low-droop blue GaInN/GaN LEDs have been realized on semipolar and nonpolar GaN substrates with reduced or eliminated polarization effects. A modified ABC model is developed to characterize the droop performance of both c-plane and nonpolar/semipolar GaInN/GaN LEDs.
| Original language | English (US) |
|---|---|
| Title of host publication | Nitride Semiconductor Light-Emitting Diodes (LEDs) |
| Subtitle of host publication | Materials, Technologies, and Applications: Second Edition |
| Publisher | Elsevier |
| Pages | 299-325 |
| Number of pages | 27 |
| ISBN (Electronic) | 9780081019436 |
| ISBN (Print) | 9780081019429 |
| DOIs | |
| State | Published - Oct 24 2017 |
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Keywords
- Auger recombination
- Carrier leakage
- Efficiency droop
- Light emitting diodes
- Nonpolar
- Polarization
- Semipolar
- Thermal droop
ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)
Cite this
Efficiency droop in GaInN/GaN LEDs. / Fu, Houqiang; Zhao, Yuji.
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications: Second Edition. Elsevier, 2017. p. 299-325.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Efficiency droop in GaInN/GaN LEDs
AU - Fu, Houqiang
AU - Zhao, Yuji
PY - 2017/10/24
Y1 - 2017/10/24
N2 - This chapter will discuss widely studied but still debated topic in GaInN/GaN light emitting diodes (LEDs): efficiency droop. Efficiency droop refers to the reduction of efficiency with increasing current (current droop) or temperature (thermal droop). Two of the most recognized mechanisms are proposed to explain the origin of the efficiency droop, that is, Auger recombination and carrier leakage. Experimental data and theoretical simulations are provided to support each mechanism. The efficiency droop in c-plane GaInN/GaN LEDs is exacerbated due to the polarization effect. To solve this issue, very low-droop blue GaInN/GaN LEDs have been realized on semipolar and nonpolar GaN substrates with reduced or eliminated polarization effects. A modified ABC model is developed to characterize the droop performance of both c-plane and nonpolar/semipolar GaInN/GaN LEDs.
AB - This chapter will discuss widely studied but still debated topic in GaInN/GaN light emitting diodes (LEDs): efficiency droop. Efficiency droop refers to the reduction of efficiency with increasing current (current droop) or temperature (thermal droop). Two of the most recognized mechanisms are proposed to explain the origin of the efficiency droop, that is, Auger recombination and carrier leakage. Experimental data and theoretical simulations are provided to support each mechanism. The efficiency droop in c-plane GaInN/GaN LEDs is exacerbated due to the polarization effect. To solve this issue, very low-droop blue GaInN/GaN LEDs have been realized on semipolar and nonpolar GaN substrates with reduced or eliminated polarization effects. A modified ABC model is developed to characterize the droop performance of both c-plane and nonpolar/semipolar GaInN/GaN LEDs.
KW - Auger recombination
KW - Carrier leakage
KW - Efficiency droop
KW - Light emitting diodes
KW - Nonpolar
KW - Polarization
KW - Semipolar
KW - Thermal droop
UR - http://www.scopus.com/inward/record.url?scp=85054399076&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85054399076&partnerID=8YFLogxK
U2 - 10.1016/B978-0-08-101942-9.00009-5
DO - 10.1016/B978-0-08-101942-9.00009-5
M3 - Chapter
AN - SCOPUS:85054399076
SN - 9780081019429
SP - 299
EP - 325
BT - Nitride Semiconductor Light-Emitting Diodes (LEDs)
PB - Elsevier
ER -