Efficacy of the thermalized effective potential approach for modeling nano-devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The efficacy of the thermalized parameter-free effective potential approach described elsewhere is examined with regard to its application to modeling of alternative device technologies. Our investigations suggest that the Hartree correction is significant only for very high doping densities, as it is the case in deca-nano MOSFETs. For low doping densities, as it is usually the case in alternative device structures, such as dual-gate and FinFET devices, the Hartree term can be neglected and the Barrier term needs to be included in the model only. Since the Barrier field is pre-calculated in the initialization stages of device simulation, it does not add any additional computational cost, thus leading to a very effective way of including quantum mechanical spacequantization effects in the computational model.

Original languageEnglish (US)
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages251-254
Number of pages4
Volume2005
StatePublished - 2005
Event2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, Japan
Duration: Sep 1 2005Sep 3 2005

Other

Other2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
CountryJapan
CityTokyo
Period9/1/059/3/05

Fingerprint

Doping (additives)
Costs
FinFET

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ahmed, S. S., Ringhofer, C., & Vasileska, D. (2005). Efficacy of the thermalized effective potential approach for modeling nano-devices. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (Vol. 2005, pp. 251-254). [1562072]

Efficacy of the thermalized effective potential approach for modeling nano-devices. / Ahmed, Shaikh S.; Ringhofer, Christian; Vasileska, Dragica.

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Vol. 2005 2005. p. 251-254 1562072.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ahmed, SS, Ringhofer, C & Vasileska, D 2005, Efficacy of the thermalized effective potential approach for modeling nano-devices. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. vol. 2005, 1562072, pp. 251-254, 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005, Tokyo, Japan, 9/1/05.
Ahmed SS, Ringhofer C, Vasileska D. Efficacy of the thermalized effective potential approach for modeling nano-devices. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Vol. 2005. 2005. p. 251-254. 1562072
Ahmed, Shaikh S. ; Ringhofer, Christian ; Vasileska, Dragica. / Efficacy of the thermalized effective potential approach for modeling nano-devices. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Vol. 2005 2005. pp. 251-254
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