EFFECTS OF TRANSIENT CARRIER TRANSPORT IN MILLIMETER-WAVE GaAs DIODES.

R. O. Grondin, Peter A. Blakey, J. R. East

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Effects of transient carrier transport on the performance of millimeter-wave GaAs diodes are investigated using results obtained from a Monte Carlo simulation of electron transport. Transit-time devices (such as IMPATT's and TUNNETT's) are discussed first. Mechanisms by which transient effects in the drifting charge pulse may enhance or degrade performance are identified and discussed. Attention is then focused on electron transport in the undepleted epitaxial material which will be present in mixer and varactor diodes and may be present in transit-time diodes. The frequency and signal-level dependence of the conductance of such material is calculated and the implications for device performance are discussed.

Original languageEnglish (US)
Pages (from-to)21-28
Number of pages8
JournalIEEE Transactions on Electron Devices
VolumeED-31
Issue number1
StatePublished - Jan 1984
Externally publishedYes

Fingerprint

Carrier transport
Millimeter waves
millimeter waves
Diodes
diodes
transit time
Transit time devices
varactor diodes
Varactors
electrons
pulses
gallium arsenide
simulation
Electron Transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Grondin, R. O., Blakey, P. A., & East, J. R. (1984). EFFECTS OF TRANSIENT CARRIER TRANSPORT IN MILLIMETER-WAVE GaAs DIODES. IEEE Transactions on Electron Devices, ED-31(1), 21-28.

EFFECTS OF TRANSIENT CARRIER TRANSPORT IN MILLIMETER-WAVE GaAs DIODES. / Grondin, R. O.; Blakey, Peter A.; East, J. R.

In: IEEE Transactions on Electron Devices, Vol. ED-31, No. 1, 01.1984, p. 21-28.

Research output: Contribution to journalArticle

Grondin, RO, Blakey, PA & East, JR 1984, 'EFFECTS OF TRANSIENT CARRIER TRANSPORT IN MILLIMETER-WAVE GaAs DIODES.', IEEE Transactions on Electron Devices, vol. ED-31, no. 1, pp. 21-28.
Grondin, R. O. ; Blakey, Peter A. ; East, J. R. / EFFECTS OF TRANSIENT CARRIER TRANSPORT IN MILLIMETER-WAVE GaAs DIODES. In: IEEE Transactions on Electron Devices. 1984 ; Vol. ED-31, No. 1. pp. 21-28.
@article{fd06d0036bda469cbede4b773f5022b2,
title = "EFFECTS OF TRANSIENT CARRIER TRANSPORT IN MILLIMETER-WAVE GaAs DIODES.",
abstract = "Effects of transient carrier transport on the performance of millimeter-wave GaAs diodes are investigated using results obtained from a Monte Carlo simulation of electron transport. Transit-time devices (such as IMPATT's and TUNNETT's) are discussed first. Mechanisms by which transient effects in the drifting charge pulse may enhance or degrade performance are identified and discussed. Attention is then focused on electron transport in the undepleted epitaxial material which will be present in mixer and varactor diodes and may be present in transit-time diodes. The frequency and signal-level dependence of the conductance of such material is calculated and the implications for device performance are discussed.",
author = "Grondin, {R. O.} and Blakey, {Peter A.} and East, {J. R.}",
year = "1984",
month = "1",
language = "English (US)",
volume = "ED-31",
pages = "21--28",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - EFFECTS OF TRANSIENT CARRIER TRANSPORT IN MILLIMETER-WAVE GaAs DIODES.

AU - Grondin, R. O.

AU - Blakey, Peter A.

AU - East, J. R.

PY - 1984/1

Y1 - 1984/1

N2 - Effects of transient carrier transport on the performance of millimeter-wave GaAs diodes are investigated using results obtained from a Monte Carlo simulation of electron transport. Transit-time devices (such as IMPATT's and TUNNETT's) are discussed first. Mechanisms by which transient effects in the drifting charge pulse may enhance or degrade performance are identified and discussed. Attention is then focused on electron transport in the undepleted epitaxial material which will be present in mixer and varactor diodes and may be present in transit-time diodes. The frequency and signal-level dependence of the conductance of such material is calculated and the implications for device performance are discussed.

AB - Effects of transient carrier transport on the performance of millimeter-wave GaAs diodes are investigated using results obtained from a Monte Carlo simulation of electron transport. Transit-time devices (such as IMPATT's and TUNNETT's) are discussed first. Mechanisms by which transient effects in the drifting charge pulse may enhance or degrade performance are identified and discussed. Attention is then focused on electron transport in the undepleted epitaxial material which will be present in mixer and varactor diodes and may be present in transit-time diodes. The frequency and signal-level dependence of the conductance of such material is calculated and the implications for device performance are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0021204463&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021204463&partnerID=8YFLogxK

M3 - Article

VL - ED-31

SP - 21

EP - 28

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 1

ER -