Abstract

This brief aims to show the effects of threading edge dislocations on the dc and RF performance of GaN highelectron mobility transistor (HEMT) devices. A state-of-the-art high-frequency and high-power HEMT was investigated with our full-band cellular Monte Carlo (CMC) simulator, which includes the full details of the band structure and the phonon spectra. A complete characterization of the device has been performed using experimental data to calibrate the few adjustable parameters of the simulator. Thermal simulations were also carried out with commercial software in order to operate the corrections needed to model thermal effects. The approach of Weimann based on the results of Read, Bonch-Bruevich and Glasko, and Pödör was then used to model with our CMC code the dislocation effects on the transport properties of HEMT devices. Our simulations indicate that GaN HEMT performance exhibits a fairly large dependence on the density of thread dislocation defects. Furthermore, we show that a threshold concentration exists, above which a complete degradation of the device operation occurs.

Original languageEnglish (US)
Article number5339189
Pages (from-to)353-360
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume57
Issue number1
DOIs
StatePublished - Jan 2010

Fingerprint

High electron mobility transistors
Transistors
Simulators
Edge dislocations
Band structure
Thermal effects
Transport properties
Degradation
Defects
aluminum gallium nitride

Keywords

  • Dislocations
  • GaN
  • High-electron mobility transistor (HEMT)
  • High-frequency
  • Monte Carlo
  • Numerical simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors. / Marino, Fabio Alessio; Faralli, Nicolas; Palacios, Tomás; Ferry, David K.; Goodnick, Stephen; Saraniti, Marco.

In: IEEE Transactions on Electron Devices, Vol. 57, No. 1, 5339189, 01.2010, p. 353-360.

Research output: Contribution to journalArticle

Marino, Fabio Alessio ; Faralli, Nicolas ; Palacios, Tomás ; Ferry, David K. ; Goodnick, Stephen ; Saraniti, Marco. / Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors. In: IEEE Transactions on Electron Devices. 2010 ; Vol. 57, No. 1. pp. 353-360.
@article{442fbf874d4a4069b5167138445528f8,
title = "Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors",
abstract = "This brief aims to show the effects of threading edge dislocations on the dc and RF performance of GaN highelectron mobility transistor (HEMT) devices. A state-of-the-art high-frequency and high-power HEMT was investigated with our full-band cellular Monte Carlo (CMC) simulator, which includes the full details of the band structure and the phonon spectra. A complete characterization of the device has been performed using experimental data to calibrate the few adjustable parameters of the simulator. Thermal simulations were also carried out with commercial software in order to operate the corrections needed to model thermal effects. The approach of Weimann based on the results of Read, Bonch-Bruevich and Glasko, and P{\"o}d{\"o}r was then used to model with our CMC code the dislocation effects on the transport properties of HEMT devices. Our simulations indicate that GaN HEMT performance exhibits a fairly large dependence on the density of thread dislocation defects. Furthermore, we show that a threshold concentration exists, above which a complete degradation of the device operation occurs.",
keywords = "Dislocations, GaN, High-electron mobility transistor (HEMT), High-frequency, Monte Carlo, Numerical simulation",
author = "Marino, {Fabio Alessio} and Nicolas Faralli and Tom{\'a}s Palacios and Ferry, {David K.} and Stephen Goodnick and Marco Saraniti",
year = "2010",
month = "1",
doi = "10.1109/TED.2009.2035024",
language = "English (US)",
volume = "57",
pages = "353--360",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors

AU - Marino, Fabio Alessio

AU - Faralli, Nicolas

AU - Palacios, Tomás

AU - Ferry, David K.

AU - Goodnick, Stephen

AU - Saraniti, Marco

PY - 2010/1

Y1 - 2010/1

N2 - This brief aims to show the effects of threading edge dislocations on the dc and RF performance of GaN highelectron mobility transistor (HEMT) devices. A state-of-the-art high-frequency and high-power HEMT was investigated with our full-band cellular Monte Carlo (CMC) simulator, which includes the full details of the band structure and the phonon spectra. A complete characterization of the device has been performed using experimental data to calibrate the few adjustable parameters of the simulator. Thermal simulations were also carried out with commercial software in order to operate the corrections needed to model thermal effects. The approach of Weimann based on the results of Read, Bonch-Bruevich and Glasko, and Pödör was then used to model with our CMC code the dislocation effects on the transport properties of HEMT devices. Our simulations indicate that GaN HEMT performance exhibits a fairly large dependence on the density of thread dislocation defects. Furthermore, we show that a threshold concentration exists, above which a complete degradation of the device operation occurs.

AB - This brief aims to show the effects of threading edge dislocations on the dc and RF performance of GaN highelectron mobility transistor (HEMT) devices. A state-of-the-art high-frequency and high-power HEMT was investigated with our full-band cellular Monte Carlo (CMC) simulator, which includes the full details of the band structure and the phonon spectra. A complete characterization of the device has been performed using experimental data to calibrate the few adjustable parameters of the simulator. Thermal simulations were also carried out with commercial software in order to operate the corrections needed to model thermal effects. The approach of Weimann based on the results of Read, Bonch-Bruevich and Glasko, and Pödör was then used to model with our CMC code the dislocation effects on the transport properties of HEMT devices. Our simulations indicate that GaN HEMT performance exhibits a fairly large dependence on the density of thread dislocation defects. Furthermore, we show that a threshold concentration exists, above which a complete degradation of the device operation occurs.

KW - Dislocations

KW - GaN

KW - High-electron mobility transistor (HEMT)

KW - High-frequency

KW - Monte Carlo

KW - Numerical simulation

UR - http://www.scopus.com/inward/record.url?scp=73349126090&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73349126090&partnerID=8YFLogxK

U2 - 10.1109/TED.2009.2035024

DO - 10.1109/TED.2009.2035024

M3 - Article

AN - SCOPUS:73349126090

VL - 57

SP - 353

EP - 360

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 1

M1 - 5339189

ER -