9 Citations (Scopus)

Abstract

AlGaN/GaN test structures were fabricated with an etched constriction. A nitrogen plasma treatment was used to remove the disordered layer, including natural oxides on the AlGaN surface, before the growth of the silicon nitride passivation film on several of the test structures. A pulsed voltage input, with a 200 ns pulse width, and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. The samples performed similarly over low fields, giving a low-field mobility of 545 cm2 V-1 s-1. The surface treated sample performed slightly better at higher fields than the untreated sample. The highest velocity measured was 1.25 × 107 cm s-1 at a field of 26 kV cm-1.

Original languageEnglish (US)
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 2004

Fingerprint

surface treatment
Surface treatment
Heterojunctions
velocity distribution
Nitrogen plasma
Silicon nitride
Passivation
Oxides
nitrogen plasma
silicon nitrides
passivity
constrictions
pulse duration
Electric potential
oxides
electric potential
room temperature
Temperature
aluminum gallium nitride
silicon nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Effects of surface treatment on the velocity-field characteristics of AlGaN/GaN heterostructures. / Barker, J. M.; Ferry, D. K.; Goodnick, Stephen; Koleske, D. D.; Allerman, A.; Shul, R. J.

In: Semiconductor Science and Technology, Vol. 19, No. 4 SPEC. ISS., 04.2004.

Research output: Contribution to journalArticle

Barker, J. M. ; Ferry, D. K. ; Goodnick, Stephen ; Koleske, D. D. ; Allerman, A. ; Shul, R. J. / Effects of surface treatment on the velocity-field characteristics of AlGaN/GaN heterostructures. In: Semiconductor Science and Technology. 2004 ; Vol. 19, No. 4 SPEC. ISS.
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T1 - Effects of surface treatment on the velocity-field characteristics of AlGaN/GaN heterostructures

AU - Barker, J. M.

AU - Ferry, D. K.

AU - Goodnick, Stephen

AU - Koleske, D. D.

AU - Allerman, A.

AU - Shul, R. J.

PY - 2004/4

Y1 - 2004/4

N2 - AlGaN/GaN test structures were fabricated with an etched constriction. A nitrogen plasma treatment was used to remove the disordered layer, including natural oxides on the AlGaN surface, before the growth of the silicon nitride passivation film on several of the test structures. A pulsed voltage input, with a 200 ns pulse width, and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. The samples performed similarly over low fields, giving a low-field mobility of 545 cm2 V-1 s-1. The surface treated sample performed slightly better at higher fields than the untreated sample. The highest velocity measured was 1.25 × 107 cm s-1 at a field of 26 kV cm-1.

AB - AlGaN/GaN test structures were fabricated with an etched constriction. A nitrogen plasma treatment was used to remove the disordered layer, including natural oxides on the AlGaN surface, before the growth of the silicon nitride passivation film on several of the test structures. A pulsed voltage input, with a 200 ns pulse width, and a four-point measurement were used in a 50 Ω environment to determine the room temperature velocity-field characteristic of the structures. The samples performed similarly over low fields, giving a low-field mobility of 545 cm2 V-1 s-1. The surface treated sample performed slightly better at higher fields than the untreated sample. The highest velocity measured was 1.25 × 107 cm s-1 at a field of 26 kV cm-1.

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