The effective mobility of electrons in the inverted Si(100) surface has been measured by a variety of authors over a range of temperatures, gate voltages, back-bias, and doping levels. Generally, it is found that these data are such that the mobility can be unified if plotted against the effective surface normal field E//e//f//f equals (Q//B plus Q//N/2)/ epsilon //S//i. It has generally been assumed that surface-roughness scattering plays a significiant role in determining the inversion layer mobility. This latter scattering mechanism depends upon the parameters DELTA and L, which have been measured from HRTEM images of the Si/SiO//2 interface as DELTA equals 0. 23 nm and L equals 1. 8 nm. These may then be used to determine the surface-roughness contribution to the mobility. Generally, it is found that this scattering is too weak, and has too strong a dependence upon E//e//f//f to impact the inversion layer mobility at room temperature. The author finds that the mobility is dominated by the projection of the 3D bulk phonon limited mobility into the surface inversion layer. A simple average technique is proposed which gives a power law dependence upon E//e//f//f left bracket mu equals (E//c/E//e//f//f)**1**/**3 mu //3//D with E//c equals 2. 48 multiplied by 10**4 V/cm right bracket so that there is agreement with the measured data.
|Original language||English (US)|
|Title of host publication||Technical Digest - International Electron Devices Meeting|
|Number of pages||4|
|Publication status||Published - 1984|
ASJC Scopus subject areas
- Electrical and Electronic Engineering