Abstract

In0.14Ga0.86N/GaN multiple quantum-wells (MQWs) with well widths of 7, 5 and 2.5 nm were grown using metal-organic chemical vapor deposition on (0 0 0 1) GaN/sapphire composites. The as-grown MQWs were investigated by high-resolution X-ray diffraction (HRXRD), scanning transmission electron microscopy and photoluminescence (PL). The HRXRD ω-2θ scans and high-angle annular dark-field (HAADF) images show that the In 0.14Ga0.86N/GaN interfaces are flat. Furthermore, the atomic-resolution HAADF images and HRXRD reciprocal space mappings indicate that interfaces between different layers in MQWs are pseudomorphic. The calculations of stresses in MQWs show that the compressive stress in the In 0.14Ga0.86N wells decreases as the well width increases. Electron energy loss spectroscopy line scans reveal the occurrence of phase separation in the lateral direction only in 7 nm thick wells and inhomogeneous In distribution in the vertical direction as well. PL shows a red-shift of the In0.14Ga0.86N peak and decreased peak emission with increased well widths. Arguments will be developed to rationalize these observations.

Original languageEnglish (US)
Pages (from-to)3759-3769
Number of pages11
JournalActa Materialia
Volume59
Issue number10
DOIs
StatePublished - Jun 2011

Fingerprint

Phase separation
Semiconductor quantum wells
X ray diffraction
Photoluminescence
Organic Chemicals
Aluminum Oxide
Electron energy loss spectroscopy
Organic chemicals
Compressive stress
Sapphire
Chemical vapor deposition
Metals
Transmission electron microscopy
Scanning electron microscopy
Composite materials
Direction compound

Keywords

  • Electron energy loss spectroscopy (EELS)
  • Nitrides
  • Scanning/transmission electron microscopy (STEM)
  • Spinoidal

ASJC Scopus subject areas

  • Ceramics and Composites
  • Metals and Alloys
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials

Cite this

Effects of stress on phase separation in InxGa1- xN/GaN multiple quantum-wells. / Zhang, Q. L.; Meng, F. Y.; Crozier, Peter; Newman, Nathan; Mahajan, S.

In: Acta Materialia, Vol. 59, No. 10, 06.2011, p. 3759-3769.

Research output: Contribution to journalArticle

Zhang, Q. L. ; Meng, F. Y. ; Crozier, Peter ; Newman, Nathan ; Mahajan, S. / Effects of stress on phase separation in InxGa1- xN/GaN multiple quantum-wells. In: Acta Materialia. 2011 ; Vol. 59, No. 10. pp. 3759-3769.
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abstract = "In0.14Ga0.86N/GaN multiple quantum-wells (MQWs) with well widths of 7, 5 and 2.5 nm were grown using metal-organic chemical vapor deposition on (0 0 0 1) GaN/sapphire composites. The as-grown MQWs were investigated by high-resolution X-ray diffraction (HRXRD), scanning transmission electron microscopy and photoluminescence (PL). The HRXRD ω-2θ scans and high-angle annular dark-field (HAADF) images show that the In 0.14Ga0.86N/GaN interfaces are flat. Furthermore, the atomic-resolution HAADF images and HRXRD reciprocal space mappings indicate that interfaces between different layers in MQWs are pseudomorphic. The calculations of stresses in MQWs show that the compressive stress in the In 0.14Ga0.86N wells decreases as the well width increases. Electron energy loss spectroscopy line scans reveal the occurrence of phase separation in the lateral direction only in 7 nm thick wells and inhomogeneous In distribution in the vertical direction as well. PL shows a red-shift of the In0.14Ga0.86N peak and decreased peak emission with increased well widths. Arguments will be developed to rationalize these observations.",
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