Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures

Yu I. Mazur, V. G. Dorogan, M. Benamara, M. E. Ware, M. Schmidbauer, G. G. Tarasov, Shane Johnson, X. Lu, S. Q. Yu, T. Tiedje, G. J. Salamo

Research output: Contribution to journalArticle

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Abstract

The structural and optical properties of a set of high-quality GaAs 1-xBix/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.

Original languageEnglish (US)
Article number065306
JournalJournal of Physics D: Applied Physics
Volume46
Issue number6
DOIs
StatePublished - Feb 13 2013

Fingerprint

Heterojunctions
Photoluminescence
Optical properties
disorders
photoluminescence
Electron transitions
Ground state
Semiconductor quantum wells
Luminescence
optical properties
Structural properties
line shape
traps
quantum wells
luminescence
ground state
Temperature
gallium arsenide
temperature
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Mazur, Y. I., Dorogan, V. G., Benamara, M., Ware, M. E., Schmidbauer, M., Tarasov, G. G., ... Salamo, G. J. (2013). Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures. Journal of Physics D: Applied Physics, 46(6), [065306]. https://doi.org/10.1088/0022-3727/46/6/065306

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures. / Mazur, Yu I.; Dorogan, V. G.; Benamara, M.; Ware, M. E.; Schmidbauer, M.; Tarasov, G. G.; Johnson, Shane; Lu, X.; Yu, S. Q.; Tiedje, T.; Salamo, G. J.

In: Journal of Physics D: Applied Physics, Vol. 46, No. 6, 065306, 13.02.2013.

Research output: Contribution to journalArticle

Mazur, YI, Dorogan, VG, Benamara, M, Ware, ME, Schmidbauer, M, Tarasov, GG, Johnson, S, Lu, X, Yu, SQ, Tiedje, T & Salamo, GJ 2013, 'Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures', Journal of Physics D: Applied Physics, vol. 46, no. 6, 065306. https://doi.org/10.1088/0022-3727/46/6/065306
Mazur, Yu I. ; Dorogan, V. G. ; Benamara, M. ; Ware, M. E. ; Schmidbauer, M. ; Tarasov, G. G. ; Johnson, Shane ; Lu, X. ; Yu, S. Q. ; Tiedje, T. ; Salamo, G. J. / Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures. In: Journal of Physics D: Applied Physics. 2013 ; Vol. 46, No. 6.
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