Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures

Yu I. Mazur, V. G. Dorogan, M. Benamara, M. E. Ware, M. Schmidbauer, G. G. Tarasov, Shane Johnson, X. Lu, S. Q. Yu, T. Tiedje, G. J. Salamo

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27 Scopus citations

Abstract

The structural and optical properties of a set of high-quality GaAs 1-xBix/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.

Original languageEnglish (US)
Article number065306
JournalJournal of Physics D: Applied Physics
Volume46
Issue number6
DOIs
StatePublished - Feb 13 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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    Mazur, Y. I., Dorogan, V. G., Benamara, M., Ware, M. E., Schmidbauer, M., Tarasov, G. G., Johnson, S., Lu, X., Yu, S. Q., Tiedje, T., & Salamo, G. J. (2013). Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures. Journal of Physics D: Applied Physics, 46(6), [065306]. https://doi.org/10.1088/0022-3727/46/6/065306