Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well

R. Liu; Fernando Ponce; S. L. Sahonta; D. Cherns; H. Amano; I. Akasaki

Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well

R. Liu, Fernando Ponce, S. L. Sahonta, D. Cherns, H. Amano, I. Akasaki

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effects of silicon-doping on the microstructure of Al _0.07Ga _0.93N/GaN multiple-quantum-well (MQW) have been studied by TEM. Significant changes of surface morphology and dislocation core structures have been observed due to Si-doping in the Al _0.07Ga _0.93N barriers. Threading dislocations create surface pits in the MQW as a result of Si doping. With an increasing doping level, the pits change the shape from small faceted pyramid to large cone. The formation mechanism of the surface pits has been discussed from both dynamics and kinetics points of view. We have also observed nanopipes constrict to form closed core screw dislocations in the MQW due to Si-doping.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean
Pages	775-780
Number of pages	6
Volume	798
State	Published - 2003
Event	GaN and Related Alloys - 2003 - Boston, MA, United States Duration: Dec 1 2003 → Dec 5 2003

Other

Other	GaN and Related Alloys - 2003
Country/Territory	United States
City	Boston, MA
Period	12/1/03 → 12/5/03

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{392c464137c24848881f49aec7dd5197,

title = "Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well",

abstract = "The effects of silicon-doping on the microstructure of Al 0.07Ga 0.93N/GaN multiple-quantum-well (MQW) have been studied by TEM. Significant changes of surface morphology and dislocation core structures have been observed due to Si-doping in the Al 0.07Ga 0.93N barriers. Threading dislocations create surface pits in the MQW as a result of Si doping. With an increasing doping level, the pits change the shape from small faceted pyramid to large cone. The formation mechanism of the surface pits has been discussed from both dynamics and kinetics points of view. We have also observed nanopipes constrict to form closed core screw dislocations in the MQW due to Si-doping. ",

author = "R. Liu and Fernando Ponce and Sahonta, {S. L.} and D. Cherns and H. Amano and I. Akasaki",

year = "2003",

language = "English (US)",

volume = "798",

pages = "775--780",

editor = "H.M. Ng and M. Wraback and K. Hiramatsu and N. Grandjean",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "GaN and Related Alloys - 2003 ; Conference date: 01-12-2003 Through 05-12-2003",

}

TY - GEN

T1 - Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well

AU - Liu, R.

AU - Ponce, Fernando

AU - Sahonta, S. L.

AU - Cherns, D.

AU - Amano, H.

AU - Akasaki, I.

PY - 2003

Y1 - 2003

N2 - The effects of silicon-doping on the microstructure of Al 0.07Ga 0.93N/GaN multiple-quantum-well (MQW) have been studied by TEM. Significant changes of surface morphology and dislocation core structures have been observed due to Si-doping in the Al 0.07Ga 0.93N barriers. Threading dislocations create surface pits in the MQW as a result of Si doping. With an increasing doping level, the pits change the shape from small faceted pyramid to large cone. The formation mechanism of the surface pits has been discussed from both dynamics and kinetics points of view. We have also observed nanopipes constrict to form closed core screw dislocations in the MQW due to Si-doping.

AB - The effects of silicon-doping on the microstructure of Al 0.07Ga 0.93N/GaN multiple-quantum-well (MQW) have been studied by TEM. Significant changes of surface morphology and dislocation core structures have been observed due to Si-doping in the Al 0.07Ga 0.93N barriers. Threading dislocations create surface pits in the MQW as a result of Si doping. With an increasing doping level, the pits change the shape from small faceted pyramid to large cone. The formation mechanism of the surface pits has been discussed from both dynamics and kinetics points of view. We have also observed nanopipes constrict to form closed core screw dislocations in the MQW due to Si-doping.

UR - http://www.scopus.com/inward/record.url?scp=2942739068&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942739068&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:2942739068

VL - 798

SP - 775

EP - 780

BT - Materials Research Society Symposium - Proceedings

A2 - Ng, H.M.

A2 - Wraback, M.

A2 - Hiramatsu, K.

A2 - Grandjean, N.

T2 - GaN and Related Alloys - 2003

Y2 - 1 December 2003 through 5 December 2003

ER -

Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well

Abstract

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