Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well

R. Liu, Fernando Ponce, S. L. Sahonta, D. Cherns, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of silicon-doping on the microstructure of Al 0.07Ga 0.93N/GaN multiple-quantum-well (MQW) have been studied by TEM. Significant changes of surface morphology and dislocation core structures have been observed due to Si-doping in the Al 0.07Ga 0.93N barriers. Threading dislocations create surface pits in the MQW as a result of Si doping. With an increasing doping level, the pits change the shape from small faceted pyramid to large cone. The formation mechanism of the surface pits has been discussed from both dynamics and kinetics points of view. We have also observed nanopipes constrict to form closed core screw dislocations in the MQW due to Si-doping.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsH.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean
Pages775-780
Number of pages6
Volume798
StatePublished - 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: Dec 1 2003Dec 5 2003

Other

OtherGaN and Related Alloys - 2003
CountryUnited States
CityBoston, MA
Period12/1/0312/5/03

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Liu, R., Ponce, F., Sahonta, S. L., Cherns, D., Amano, H., & Akasaki, I. (2003). Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well. In H. M. Ng, M. Wraback, K. Hiramatsu, & N. Grandjean (Eds.), Materials Research Society Symposium - Proceedings (Vol. 798, pp. 775-780)