Effects of processing on electrical properties of YBa2Cu307 films. II. In situ deposition processes

James R. Sheats, N. Newman, Robert C. Taber, Paul Merchant

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Abstract

The effects of several patterning process steps on the critical current Jcand surface resistance Rsof YBa2Cu307 films are described. Included are two off-axis sputtering processes and a metalorganic chemical-vapor deposition (MOCVD) process, all producing in situ superconducting films with c-axis epitaxial orientation. Jc and Rsparameters were measured by mutual inductance and parallel plate resonator techniques, respectively, so that the films did not require patterning for the measurement. Applying a polymer film and stripping, either with acetone or with an 02 plasma, resulted in no change in Rs. Brief ion milling, as well as baking at 185 °C with polymer film present, caused moderate degradation (—25μΩ) for films deposited on MgO (both sputtered and MOCVD). The damage caused by ion milling sputtered films on LaA103 was considerably greater (—100 μΩ); photoresist developer also had a significant effect. The degree of degradation in Rsfor these films suggests that the surface damage results in secondary effects that penetrate well into the film. This damage was not removed by annealing in 02; in fact it was made substantially worse. Jcwas increased slightly by all processes, by an amount ranging from 5% to 50%.

Original languageEnglish (US)
Pages (from-to)388-392
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume12
Issue number2
DOIs
StatePublished - Mar 1994

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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