Effects of multi-ion impurity scattering on electron velocities in bulk GaAs

R. P. Joshi, D. K. Ferry

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Many authors have calculated, and measured, the velocity-field curve in bulk GaAs. However, many new incorporations within a proper ensemble Monte Carlo simulation have improved greatly the ability to understand fully the physics inherent in the velocity-field curves. One such improvement, which has arisen from the treatment of the electron-impurity interaction via real-space molecular-dynamics approach, is the recognition that screening is overestimated in most simple approaches, and the typical electron interacts with many impurities simultaneously. Here, the authors incorporate these more complicated approaches to determine the velocity-field curve at densities above 3*1017 cm-3.

Original languageEnglish (US)
Article number080
Pages (from-to)B319-B321
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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