Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide

C. D. Lien, M. A. Nicolet, Peter Williams

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Near-noble metal (nickel, platinum and palladium) films were evaporated onto silicon substrates, the surfaces of which were slightly oxidized in an oxygen plasma. The samples were irradiated with Si+ to different doses to break up the interfacial oxide. The samples were then annealed in vacuum at 400°C. For the low dose irradiated samples, the silicides formed after thermal annealing are laterally non-uniform. The interfacial oxygen profiles were found to be quite broad and to be located in the silicide. For the high dose irradiated samples, the silicides are laterally uniform. The interfacial oxygen profiles were found to be narrow and were located at the sample surface for the cases of nickel and platinum and at the silicon-silicide interface for the case of palladium. A model is proposed to explain the experimental results.

Original languageEnglish (US)
Pages (from-to)69-76
Number of pages8
JournalThin Solid Films
Volume136
Issue number1
DOIs
StatePublished - Feb 1 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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