Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide

C. D. Lien, M. A. Nicolet, Peter Williams

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Near-noble metal (nickel, platinum and palladium) films were evaporated onto silicon substrates, the surfaces of which were slightly oxidized in an oxygen plasma. The samples were irradiated with Si+ to different doses to break up the interfacial oxide. The samples were then annealed in vacuum at 400°C. For the low dose irradiated samples, the silicides formed after thermal annealing are laterally non-uniform. The interfacial oxygen profiles were found to be quite broad and to be located in the silicide. For the high dose irradiated samples, the silicides are laterally uniform. The interfacial oxygen profiles were found to be narrow and were located at the sample surface for the cases of nickel and platinum and at the silicon-silicide interface for the case of palladium. A model is proposed to explain the experimental results.

Original languageEnglish (US)
Pages (from-to)69-76
Number of pages8
JournalThin Solid Films
Volume136
Issue number1
DOIs
StatePublished - Feb 1 1986

Fingerprint

Silicides
silicides
Ion bombardment
ion irradiation
Oxides
Palladium
Silicon
Oxygen
Platinum
Nickel
oxides
dosage
palladium
Precious metals
platinum
nickel
Vacuum
Annealing
Plasmas
oxygen plasma

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide. / Lien, C. D.; Nicolet, M. A.; Williams, Peter.

In: Thin Solid Films, Vol. 136, No. 1, 01.02.1986, p. 69-76.

Research output: Contribution to journalArticle

@article{10a698b0630c40ff8832711ec6e63339,
title = "Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide",
abstract = "Near-noble metal (nickel, platinum and palladium) films were evaporated onto silicon substrates, the surfaces of which were slightly oxidized in an oxygen plasma. The samples were irradiated with Si+ to different doses to break up the interfacial oxide. The samples were then annealed in vacuum at 400°C. For the low dose irradiated samples, the silicides formed after thermal annealing are laterally non-uniform. The interfacial oxygen profiles were found to be quite broad and to be located in the silicide. For the high dose irradiated samples, the silicides are laterally uniform. The interfacial oxygen profiles were found to be narrow and were located at the sample surface for the cases of nickel and platinum and at the silicon-silicide interface for the case of palladium. A model is proposed to explain the experimental results.",
author = "Lien, {C. D.} and Nicolet, {M. A.} and Peter Williams",
year = "1986",
month = "2",
day = "1",
doi = "10.1016/0040-6090(86)90109-4",
language = "English (US)",
volume = "136",
pages = "69--76",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Effects of ion irradiation on thermally formed silicides in the presence of interfacial oxide

AU - Lien, C. D.

AU - Nicolet, M. A.

AU - Williams, Peter

PY - 1986/2/1

Y1 - 1986/2/1

N2 - Near-noble metal (nickel, platinum and palladium) films were evaporated onto silicon substrates, the surfaces of which were slightly oxidized in an oxygen plasma. The samples were irradiated with Si+ to different doses to break up the interfacial oxide. The samples were then annealed in vacuum at 400°C. For the low dose irradiated samples, the silicides formed after thermal annealing are laterally non-uniform. The interfacial oxygen profiles were found to be quite broad and to be located in the silicide. For the high dose irradiated samples, the silicides are laterally uniform. The interfacial oxygen profiles were found to be narrow and were located at the sample surface for the cases of nickel and platinum and at the silicon-silicide interface for the case of palladium. A model is proposed to explain the experimental results.

AB - Near-noble metal (nickel, platinum and palladium) films were evaporated onto silicon substrates, the surfaces of which were slightly oxidized in an oxygen plasma. The samples were irradiated with Si+ to different doses to break up the interfacial oxide. The samples were then annealed in vacuum at 400°C. For the low dose irradiated samples, the silicides formed after thermal annealing are laterally non-uniform. The interfacial oxygen profiles were found to be quite broad and to be located in the silicide. For the high dose irradiated samples, the silicides are laterally uniform. The interfacial oxygen profiles were found to be narrow and were located at the sample surface for the cases of nickel and platinum and at the silicon-silicide interface for the case of palladium. A model is proposed to explain the experimental results.

UR - http://www.scopus.com/inward/record.url?scp=0022663777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022663777&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(86)90109-4

DO - 10.1016/0040-6090(86)90109-4

M3 - Article

VL - 136

SP - 69

EP - 76

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -