The influence of hydrogen ion temperature on the nature of cleavage and layer transfer, and the electric properties of hydrogen implanted silicon (Si) was investigated. The elastic recoil detection was used to analyze the lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films. The IR spectroscopy was used to evaluate the nature of the implantation damage. It was observed that the transferred layer from room temperature hydrogen ion implantation was both thicker and atomically smoother than the the transferred layer produced by -140°C hydrogen implantation.
ASJC Scopus subject areas
- Physics and Astronomy(all)