Effects of hydrogen implantation temperature on ion-cut of silicon

J. K. Lee, M. Nastasi, N. David Theodore, A. Smalley, Terry Alford, J. W. Mayer, M. Cai, S. S. Lau

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The influence of hydrogen ion temperature on the nature of cleavage and layer transfer, and the electric properties of hydrogen implanted silicon (Si) was investigated. The elastic recoil detection was used to analyze the lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films. The IR spectroscopy was used to evaluate the nature of the implantation damage. It was observed that the transferred layer from room temperature hydrogen ion implantation was both thicker and atomically smoother than the the transferred layer produced by -140°C hydrogen implantation.

Original languageEnglish (US)
Pages (from-to)280-288
Number of pages9
JournalJournal of Applied Physics
Volume96
Issue number1
DOIs
StatePublished - Jul 1 2004

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implantation
hydrogen ions
silicon
hydrogen
damage
ions
ion temperature
silicon films
temperature
ion implantation
cleavage
room temperature
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Lee, J. K., Nastasi, M., Theodore, N. D., Smalley, A., Alford, T., Mayer, J. W., ... Lau, S. S. (2004). Effects of hydrogen implantation temperature on ion-cut of silicon. Journal of Applied Physics, 96(1), 280-288. https://doi.org/10.1063/1.1755851

Effects of hydrogen implantation temperature on ion-cut of silicon. / Lee, J. K.; Nastasi, M.; Theodore, N. David; Smalley, A.; Alford, Terry; Mayer, J. W.; Cai, M.; Lau, S. S.

In: Journal of Applied Physics, Vol. 96, No. 1, 01.07.2004, p. 280-288.

Research output: Contribution to journalArticle

Lee, JK, Nastasi, M, Theodore, ND, Smalley, A, Alford, T, Mayer, JW, Cai, M & Lau, SS 2004, 'Effects of hydrogen implantation temperature on ion-cut of silicon', Journal of Applied Physics, vol. 96, no. 1, pp. 280-288. https://doi.org/10.1063/1.1755851
Lee, J. K. ; Nastasi, M. ; Theodore, N. David ; Smalley, A. ; Alford, Terry ; Mayer, J. W. ; Cai, M. ; Lau, S. S. / Effects of hydrogen implantation temperature on ion-cut of silicon. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 1. pp. 280-288.
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