Effects of hydrogen implantation temperature on ion-cut of silicon

J. K. Lee, M. Nastasi, N. David Theodore, A. Smalley, Terry Alford, J. W. Mayer, M. Cai, S. S. Lau

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33 Scopus citations

Abstract

The influence of hydrogen ion temperature on the nature of cleavage and layer transfer, and the electric properties of hydrogen implanted silicon (Si) was investigated. The elastic recoil detection was used to analyze the lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films. The IR spectroscopy was used to evaluate the nature of the implantation damage. It was observed that the transferred layer from room temperature hydrogen ion implantation was both thicker and atomically smoother than the the transferred layer produced by -140°C hydrogen implantation.

Original languageEnglish (US)
Pages (from-to)280-288
Number of pages9
JournalJournal of Applied Physics
Volume96
Issue number1
DOIs
StatePublished - Jul 1 2004

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Lee, J. K., Nastasi, M., Theodore, N. D., Smalley, A., Alford, T., Mayer, J. W., Cai, M., & Lau, S. S. (2004). Effects of hydrogen implantation temperature on ion-cut of silicon. Journal of Applied Physics, 96(1), 280-288. https://doi.org/10.1063/1.1755851