Abstract
A commercial GaAs MESFET annealed in 5% hydrogen showed shifts in its turn-on voltage and degradation in both its transconductance and drain current. Annealing in deuterium showed similar, though less extensive behavior, indicating that deuterium diffuses into the devices slower than hydrogen. A thin film diffusion experiment showed that the incorporation of hydrogen into the gate area is greatest when platinum is exposed to the hydrogen. This provides supporting evidence that the diffusion of hydrogen occurs at the Pt sidewalls and not at the Au surface of the Au/Pt/Ti gate metal.
| Original language | English (US) |
|---|---|
| Title of host publication | Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 140-143 |
| Number of pages | 4 |
| State | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - San Diego, CA, USA Duration: Oct 29 1995 → Nov 1 1995 |
Other
| Other | Proceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium |
|---|---|
| City | San Diego, CA, USA |
| Period | 10/29/95 → 11/1/95 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering