Effects of hydrogen and deuterium incorporation on the electrical performance of a GaAs MESFET

David C. Eng, Robert Culbertson, Kenneth P. MacWilliams

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

A commercial GaAs MESFET annealed in 5% hydrogen showed shifts in its turn-on voltage and degradation in both its transconductance and drain current. Annealing in deuterium showed similar, though less extensive behavior, indicating that deuterium diffuses into the devices slower than hydrogen. A thin film diffusion experiment showed that the incorporation of hydrogen into the gate area is greatest when platinum is exposed to the hydrogen. This provides supporting evidence that the diffusion of hydrogen occurs at the Pt sidewalls and not at the Au surface of the Au/Pt/Ti gate metal.

Original languageEnglish (US)
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages140-143
Number of pages4
StatePublished - 1995
Externally publishedYes
EventProceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - San Diego, CA, USA
Duration: Oct 29 1995Nov 1 1995

Other

OtherProceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
CitySan Diego, CA, USA
Period10/29/9511/1/95

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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