Effects of high-temperature anneals and Co60 gamma-ray irradiation on strained silicon on insulator

K. Park, M. Canonico, G. K. Celler, M. Seacrist, J. Chan, J. Gelpey, Keith Holbert, S. Nakagawa, M. Tajima, D. K. Schroder

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Strained silicon on insulator was exposed to high-temperature annealing and high-dose Co60 gamma (γ) -ray irradiation to study the tenacity of the bond between the strained Si film and the underlying buried oxide. During the high-temperature anneals, the samples were ramped at a rate of 150°C/s to 850°C then ramped to 1200, 1250, and 1300 °C at a rate of approximately 5× 105 °Cs for millisecond duration anneals. For the irradiation experiments, the samples were irradiated with Co60 γ rays to a dose of 51.5 kGy. All samples were characterized by ultraviolet (UV) Raman, pseudo metal-oxide-semiconductor field-effect transistor (ψ -MOSFET) current voltage, Hall mobility, and photoluminescence (PL) to verify changes in strain. UV Raman, PL, and ψ -MOSFET measurements show no strain relaxation for the high-temperature annealed samples and only very slight relaxation for the γ -ray irradiated samples.

Original languageEnglish (US)
Article number074507
JournalJournal of Applied Physics
Volume102
Issue number7
DOIs
StatePublished - 2007

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insulators
gamma rays
irradiation
silicon
rays
field effect transistors
photoluminescence
dosage
metal oxide semiconductors
annealing
oxides
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Park, K., Canonico, M., Celler, G. K., Seacrist, M., Chan, J., Gelpey, J., ... Schroder, D. K. (2007). Effects of high-temperature anneals and Co60 gamma-ray irradiation on strained silicon on insulator. Journal of Applied Physics, 102(7), [074507]. https://doi.org/10.1063/1.2787167

Effects of high-temperature anneals and Co60 gamma-ray irradiation on strained silicon on insulator. / Park, K.; Canonico, M.; Celler, G. K.; Seacrist, M.; Chan, J.; Gelpey, J.; Holbert, Keith; Nakagawa, S.; Tajima, M.; Schroder, D. K.

In: Journal of Applied Physics, Vol. 102, No. 7, 074507, 2007.

Research output: Contribution to journalArticle

Park, K, Canonico, M, Celler, GK, Seacrist, M, Chan, J, Gelpey, J, Holbert, K, Nakagawa, S, Tajima, M & Schroder, DK 2007, 'Effects of high-temperature anneals and Co60 gamma-ray irradiation on strained silicon on insulator', Journal of Applied Physics, vol. 102, no. 7, 074507. https://doi.org/10.1063/1.2787167
Park, K. ; Canonico, M. ; Celler, G. K. ; Seacrist, M. ; Chan, J. ; Gelpey, J. ; Holbert, Keith ; Nakagawa, S. ; Tajima, M. ; Schroder, D. K. / Effects of high-temperature anneals and Co60 gamma-ray irradiation on strained silicon on insulator. In: Journal of Applied Physics. 2007 ; Vol. 102, No. 7.
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