Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Evan M. Cornuelle, Tyler A. Growden, David F. Storm, Elliott R. Brown, Weidong Zhang, Brian P. Downey, Vikrant Gokhale, Laura B. Ruppalt, James G. Champlain, Prudhvi Peri, Martha R. McCartney, David J. Smith, David J. Meyer, Paul R. Berger

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Physics & Astronomy