Effects of Graded Buffer Design and Active Region Structure on GaAsP Single-Junction Solar Cells Grown on GaP/Si Templates

Shizhao Fan, Ryan D. Hool, Pankul Dhingra, Mijung Kim, Erik D. Ratta, Brian D. Li, Yukun Sun, Zhengshan J. Yu, Zachary Holman, Minjoo L. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We investigated the effect of GaAsyP1-y graded buffer layer design and cell structure on GaAsP solar cells grown on GaP/Si templates. Heavy Si doping in the graded buffer layer increases threading dislocation density (TDD) by 2.7× compared to no doping, while heavy Be doping has little or no effect on TDD. Higher TDD increases the bandgap-voltage offset, but its effect on short-circuit current density is more complex. For example, by implementing an n+/i/p structure in cells with elevated TDD, we could obtain significantly higher internal quantum efficiencies at 500-750 nm compared to n+/p structures with low TDD. All cells investigated here achieved efficiencies of 15.5-15.9% despite TDD values ranging from 4.5×106-1.2×107 cm-2.

Original languageEnglish (US)
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2044-2046
Number of pages3
ISBN (Electronic)9781728161150
DOIs
StatePublished - Jun 14 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: Jun 15 2020Aug 21 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/TerritoryCanada
CityCalgary
Period6/15/208/21/20

Keywords

  • EBIC
  • GaAsP
  • TDD
  • graded buffer
  • n+/i/p

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Effects of Graded Buffer Design and Active Region Structure on GaAsP Single-Junction Solar Cells Grown on GaP/Si Templates'. Together they form a unique fingerprint.

Cite this