Effects of gas pressure and substrate temperature on the etching of parylene-N using a remote microwave oxygen plasma

Russell R A Callahan; Gregory Raupp; Stephen P. Beaudoin

doi:10.1116/1.1366707

Effects of gas pressure and substrate temperature on the etching of parylene-N using a remote microwave oxygen plasma

Russell R A Callahan, Gregory Raupp, Stephen P. Beaudoin

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

The impact of substrate temperature and etch chamber pressure on the oxygen atom induced etching of parylene-N was analyzed using a remote microwave oxygen plasma. The reactions leading to the formation of the etch products in this process were also discussed. The X-ray photoelectron spectra analyses of etch and unetched films were presented. It was observed that the increase in substrate temperature increases etch rate.

Original language	English (US)
Pages (from-to)	725-731
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1366707
State	Published - May 2001
Event	13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: Aug 14 2000 → Aug 17 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1366707

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Effects of gas pressure and substrate temperature on the etching of parylene-N using a remote microwave oxygen plasma. / Callahan, Russell R A; Raupp, Gregory; Beaudoin, Stephen P.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 3, 05.2001, p. 725-731.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "The impact of substrate temperature and etch chamber pressure on the oxygen atom induced etching of parylene-N was analyzed using a remote microwave oxygen plasma. The reactions leading to the formation of the etch products in this process were also discussed. The X-ray photoelectron spectra analyses of etch and unetched films were presented. It was observed that the increase in substrate temperature increases etch rate.",

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AU - Raupp, Gregory

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AB - The impact of substrate temperature and etch chamber pressure on the oxygen atom induced etching of parylene-N was analyzed using a remote microwave oxygen plasma. The reactions leading to the formation of the etch products in this process were also discussed. The X-ray photoelectron spectra analyses of etch and unetched films were presented. It was observed that the increase in substrate temperature increases etch rate.

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ER -

Effects of gas pressure and substrate temperature on the etching of parylene-N using a remote microwave oxygen plasma

Abstract

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