Effects of gas pressure and substrate temperature on the etching of parylene-N using a remote microwave oxygen plasma

Russell R A Callahan, Gregory Raupp, Stephen P. Beaudoin

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The impact of substrate temperature and etch chamber pressure on the oxygen atom induced etching of parylene-N was analyzed using a remote microwave oxygen plasma. The reactions leading to the formation of the etch products in this process were also discussed. The X-ray photoelectron spectra analyses of etch and unetched films were presented. It was observed that the increase in substrate temperature increases etch rate.

Original languageEnglish (US)
Pages (from-to)725-731
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number3
DOIs
StatePublished - May 2001

Fingerprint

oxygen plasma
gas pressure
Etching
Microwaves
etching
Plasmas
microwaves
pressure chambers
Oxygen
Substrates
Photoelectrons
Gases
oxygen atoms
photoelectrons
X rays
Atoms
Temperature
temperature
products
x rays

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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AB - The impact of substrate temperature and etch chamber pressure on the oxygen atom induced etching of parylene-N was analyzed using a remote microwave oxygen plasma. The reactions leading to the formation of the etch products in this process were also discussed. The X-ray photoelectron spectra analyses of etch and unetched films were presented. It was observed that the increase in substrate temperature increases etch rate.

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