Effects of gas pressure and substrate temperature on the etching of parylene-N using a remote microwave oxygen plasma

Russell R A Callahan, Gregory Raupp, Stephen P. Beaudoin

Research output: Contribution to journalConference article

26 Scopus citations

Abstract

The impact of substrate temperature and etch chamber pressure on the oxygen atom induced etching of parylene-N was analyzed using a remote microwave oxygen plasma. The reactions leading to the formation of the etch products in this process were also discussed. The X-ray photoelectron spectra analyses of etch and unetched films were presented. It was observed that the increase in substrate temperature increases etch rate.

Original languageEnglish (US)
Pages (from-to)725-731
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number3
DOIs
StatePublished - May 1 2001
Event13th International Vaccum Microelectronics Conference - Guangzhou, China
Duration: Aug 14 2000Aug 17 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Effects of gas pressure and substrate temperature on the etching of parylene-N using a remote microwave oxygen plasma'. Together they form a unique fingerprint.

  • Cite this