Abstract

The change in electrical characteristics of a-Si:H thin-film transistors (TFTs) was determined in the presence of electrical gate bias stress, gamma radiation, and both simultaneously, simulating the harsh environment of space. Multiple TFTs were tested under each condition, and the currentvoltage characteristics were measured. The results show the gate bias stress increasing the threshold voltage (VT) with power law time dependence while the gamma irradiation decreases threshold voltage for all working transistors. When both the irradiation and gate bias stress were applied simultaneously, the VT initially increased with electrical stress and then decreased as the gamma radiation dominated. Changes in effective mobility were also extracted and detailed analysis of the current-voltage characteristics indicated that the gamma radiation creates interface traps and electron-hole pairs whereas the gate stress produces defect states in the amorphous silicon.

Original languageEnglish (US)
Article number5730529
Pages (from-to)325-329
Number of pages5
JournalIEEE/OSA Journal of Display Technology
Volume7
Issue number6
DOIs
StatePublished - Mar 17 2011

Keywords

  • Amorphous silicon
  • display technology
  • flexible electronics
  • gamma ray effects
  • thin-film transistors (TFTs
  • threshold-voltage shift,

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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