Effects of emitter-tied field plates on lateral PNP ionizing radiation response

Hugh Barnaby, R. D. Schrimpf, D. M. Fleetwood, S. L. Kosier

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Radiation response comparisons of lateral PNP bipolar devices manufactured with and without emitter-tied field plates are presented. The experimental results reveal that the devices with an emitter-tied field plate have higher current gain prior to exposure to ionizing radiation. However, the use of an emitter-tied field plate in total dose environments may provide no higher reliability against current gain degradation after significant amounts of radiation exposure.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages35-38
Number of pages4
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA
Duration: Sep 27 1998Sep 29 1998

Other

OtherProceedings of the 1998 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period9/27/989/29/98

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Barnaby, H., Schrimpf, R. D., Fleetwood, D. M., & Kosier, S. L. (1998). Effects of emitter-tied field plates on lateral PNP ionizing radiation response. In Anon (Ed.), Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 35-38). IEEE.