Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer

Engineering & Materials Science

• Edge dislocations 59%
• Screw dislocations 58%
• Burgers vector 41%
• Defects 40%
• Dislocations (crystals) 37%
• Electric breakdown 26%
• Grain boundaries 23%
• Epilayers 20%
• Synchrotrons 15%
• Chemical vapor deposition 13%
• Topography 13%
• Etching 12%
• Molten materials 11%
• X rays 10%
• Substrates 8%

Chemical Compounds

• Edge Dislocation 100%
• Screw Dislocation 94%
• Breakdown Voltage 58%
• Grain Boundary 40%
• Schottky Contact 31%
• Etching 17%
• White 16%

Physics & Astronomy

• screw dislocations 40%
• edge dislocations 39%
• defects 32%
• performance 26%
• electrical faults 23%
• grain boundaries 17%
• topography 10%
• hollow 10%
• electric contacts 10%
• synchrotrons 10%
• vapor deposition 9%
• etching 8%
• wafers 8%
• x rays 5%