TY - GEN
T1 - Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer
AU - Chen, Hui
AU - Raghothamachar, Balaji
AU - Vetter, William
AU - Dudley, Michael
AU - Wang, Y.
AU - Skromme, Brian
PY - 2006
Y1 - 2006
N2 - An 8° off-axis 4H-SiC wafer with circular Schottky contacts fabricated on a CVD grown 4H-SiC homoepitaxial layer was studied to investigate the influence of various defects, including small (closed-core) screw dislocations (Burgers vector of le or 2c), hollow-core (micropipes; Burgers vector larger than 2c), threading edge dislocations (from conversion of basal plane dislocations from the substrate into the epilayer), grain boundaries and triangular defects, on the device performance in the form of breakdown voltages. The defects were examined using synchrotron white beam x-ray topography (SWBXT) based techniques and molten KOH etching. The devices commonly contained basal plane dislocations, small screw dislocations and threading edge dislocations, the latter two of which could give rise to low breakdown voltages for the devices. In addition, less commonly observed defects such as micropipes, grain boundaries and triangular defects are much more destructive to device performance than closed-core screw dislocations and threading edge dislocations.
AB - An 8° off-axis 4H-SiC wafer with circular Schottky contacts fabricated on a CVD grown 4H-SiC homoepitaxial layer was studied to investigate the influence of various defects, including small (closed-core) screw dislocations (Burgers vector of le or 2c), hollow-core (micropipes; Burgers vector larger than 2c), threading edge dislocations (from conversion of basal plane dislocations from the substrate into the epilayer), grain boundaries and triangular defects, on the device performance in the form of breakdown voltages. The defects were examined using synchrotron white beam x-ray topography (SWBXT) based techniques and molten KOH etching. The devices commonly contained basal plane dislocations, small screw dislocations and threading edge dislocations, the latter two of which could give rise to low breakdown voltages for the devices. In addition, less commonly observed defects such as micropipes, grain boundaries and triangular defects are much more destructive to device performance than closed-core screw dislocations and threading edge dislocations.
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U2 - 10.1557/proc-0911-b12-03
DO - 10.1557/proc-0911-b12-03
M3 - Conference contribution
AN - SCOPUS:33750322201
SN - 1558998721
SN - 9781558998728
T3 - Materials Research Society Symposium Proceedings
SP - 169
EP - 174
BT - Silicon Carbide 2006 - Materials, Processing and Devices
PB - Materials Research Society
T2 - 2006 MRS Spring Meeting
Y2 - 18 April 2006 through 20 April 2006
ER -