Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer

Hui Chen, Balaji Raghothamachar, William Vetter, Michael Dudley, Y. Wang, Brian Skromme

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

An 8° off-axis 4H-SiC wafer with circular Schottky contacts fabricated on a CVD grown 4H-SiC homoepitaxial layer was studied to investigate the influence of various defects, including small (closed-core) screw dislocations (Burgers vector of le or 2c), hollow-core (micropipes; Burgers vector larger than 2c), threading edge dislocations (from conversion of basal plane dislocations from the substrate into the epilayer), grain boundaries and triangular defects, on the device performance in the form of breakdown voltages. The defects were examined using synchrotron white beam x-ray topography (SWBXT) based techniques and molten KOH etching. The devices commonly contained basal plane dislocations, small screw dislocations and threading edge dislocations, the latter two of which could give rise to low breakdown voltages for the devices. In addition, less commonly observed defects such as micropipes, grain boundaries and triangular defects are much more destructive to device performance than closed-core screw dislocations and threading edge dislocations.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages169-174
Number of pages6
Volume911
StatePublished - 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 20 2006

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/18/064/20/06

Fingerprint

Edge dislocations
Screw dislocations
Defects
Burgers vector
Electric breakdown
Dislocations (crystals)
Grain boundaries
Epilayers
Synchrotrons
Topography
Molten materials
Chemical vapor deposition
Etching
X rays
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chen, H., Raghothamachar, B., Vetter, W., Dudley, M., Wang, Y., & Skromme, B. (2006). Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer. In Materials Research Society Symposium Proceedings (Vol. 911, pp. 169-174)

Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer. / Chen, Hui; Raghothamachar, Balaji; Vetter, William; Dudley, Michael; Wang, Y.; Skromme, Brian.

Materials Research Society Symposium Proceedings. Vol. 911 2006. p. 169-174.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, H, Raghothamachar, B, Vetter, W, Dudley, M, Wang, Y & Skromme, B 2006, Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer. in Materials Research Society Symposium Proceedings. vol. 911, pp. 169-174, 2006 MRS Spring Meeting, San Francisco, CA, United States, 4/18/06.
Chen H, Raghothamachar B, Vetter W, Dudley M, Wang Y, Skromme B. Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer. In Materials Research Society Symposium Proceedings. Vol. 911. 2006. p. 169-174
Chen, Hui ; Raghothamachar, Balaji ; Vetter, William ; Dudley, Michael ; Wang, Y. ; Skromme, Brian. / Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer. Materials Research Society Symposium Proceedings. Vol. 911 2006. pp. 169-174
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