Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation

R. P. Joshi; Kong-Thon Tsen; D. K. Ferry; A. Salvador; A. Botcharev; H. Morkoc

doi:10.1117/12.306166

Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation

R. P. Joshi, Kong-Thon Tsen, D. K. Ferry, A. Salvador, A. Botcharev, H. Morkoc

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n ≤ 10 ¹⁵cm ^-3. As the density of photoexcited carders increased we observed a significant decrease of the average electric field. In particular, for n = 10 ¹⁸cm ^-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	K.T. Tsen, H.R. Fetterman
Pages	283-291
Number of pages	9
Volume	3277
DOIs	https://doi.org/10.1117/12.306166
State	Published - 1998
Externally published	Yes
Event	Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998

Other

Other	Ultrafast Phenomena in Semiconductors II
Country	United States
City	San Jose, CA
Period	1/28/98 → 1/29/98

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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Joshi, R. P., Tsen, K-T., Ferry, D. K., Salvador, A., Botcharev, A., & Morkoc, H. (1998). Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation. In K. T. Tsen, & H. R. Fetterman (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3277, pp. 283-291) https://doi.org/10.1117/12.306166

Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation. / Joshi, R. P.; Tsen, Kong-Thon; Ferry, D. K.; Salvador, A.; Botcharev, A.; Morkoc, H.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.T. Tsen; H.R. Fetterman. Vol. 3277 1998. p. 283-291.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Joshi, RP, Tsen, K-T, Ferry, DK, Salvador, A, Botcharev, A & Morkoc, H 1998, Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation. in KT Tsen & HR Fetterman (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 3277, pp. 283-291, Ultrafast Phenomena in Semiconductors II, San Jose, CA, United States, 1/28/98. https://doi.org/10.1117/12.306166

Joshi RP, Tsen K-T, Ferry DK, Salvador A, Botcharev A, Morkoc H. Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation. In Tsen KT, Fetterman HR, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3277. 1998. p. 283-291 https://doi.org/10.1117/12.306166

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title = "Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation",

abstract = "We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n ≤ 10 15cm -3. As the density of photoexcited carders increased we observed a significant decrease of the average electric field. In particular, for n = 10 18cm -3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained. ",

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AB - We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n ≤ 10 15cm -3. As the density of photoexcited carders increased we observed a significant decrease of the average electric field. In particular, for n = 10 18cm -3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.

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Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation

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