Abstract
We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n ≤ 10 15cm -3. As the density of photoexcited carders increased we observed a significant decrease of the average electric field. In particular, for n = 10 18cm -3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | K.T. Tsen, H.R. Fetterman |
| Pages | 283-291 |
| Number of pages | 9 |
| Volume | 3277 |
| DOIs | |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998 |
Other
| Other | Ultrafast Phenomena in Semiconductors II |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 1/28/98 → 1/29/98 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation. / Joshi, R. P.; Tsen, Kong-Thon; Ferry, D. K.; Salvador, A.; Botcharev, A.; Morkoc, H.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.T. Tsen; H.R. Fetterman. Vol. 3277 1998. p. 283-291.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation
AU - Joshi, R. P.
AU - Tsen, Kong-Thon
AU - Ferry, D. K.
AU - Salvador, A.
AU - Botcharev, A.
AU - Morkoc, H.
PY - 1998
Y1 - 1998
N2 - We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n ≤ 10 15cm -3. As the density of photoexcited carders increased we observed a significant decrease of the average electric field. In particular, for n = 10 18cm -3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.
AB - We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n ≤ 10 15cm -3. As the density of photoexcited carders increased we observed a significant decrease of the average electric field. In particular, for n = 10 18cm -3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.
UR - http://www.scopus.com/inward/record.url?scp=0032225508&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032225508&partnerID=8YFLogxK
U2 - 10.1117/12.306166
DO - 10.1117/12.306166
M3 - Conference contribution
VL - 3277
SP - 283
EP - 291
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Tsen, K.T.
A2 - Fetterman, H.R.
ER -