Abstract
We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n ≤ 10 15cm -3. As the density of photoexcited carders increased we observed a significant decrease of the average electric field. In particular, for n = 10 18cm -3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | K.T. Tsen, H.R. Fetterman |
Pages | 283-291 |
Number of pages | 9 |
Volume | 3277 |
DOIs | |
State | Published - 1998 |
Externally published | Yes |
Event | Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998 |
Other
Other | Ultrafast Phenomena in Semiconductors II |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/28/98 → 1/29/98 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics