Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation

R. P. Joshi, Kong-Thon Tsen, D. K. Ferry, A. Salvador, A. Botcharev, H. Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n ≤ 10 15cm -3. As the density of photoexcited carders increased we observed a significant decrease of the average electric field. In particular, for n = 10 18cm -3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, H.R. Fetterman
Pages283-291
Number of pages9
Volume3277
DOIs
StatePublished - 1998
Externally publishedYes
EventUltrafast Phenomena in Semiconductors II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

Other

OtherUltrafast Phenomena in Semiconductors II
CountryUnited States
CitySan Jose, CA
Period1/28/981/29/98

Fingerprint

Laser excitation
Nanostructures
Screening
screening
Electric fields
electric fields
excitation
lasers
Photoexcitation
photoexcitation
Raman scattering
Raman spectra
Semiconductor materials
Electrons
Lasers
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Joshi, R. P., Tsen, K-T., Ferry, D. K., Salvador, A., Botcharev, A., & Morkoc, H. (1998). Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation. In K. T. Tsen, & H. R. Fetterman (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3277, pp. 283-291) https://doi.org/10.1117/12.306166

Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation. / Joshi, R. P.; Tsen, Kong-Thon; Ferry, D. K.; Salvador, A.; Botcharev, A.; Morkoc, H.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.T. Tsen; H.R. Fetterman. Vol. 3277 1998. p. 283-291.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Joshi, RP, Tsen, K-T, Ferry, DK, Salvador, A, Botcharev, A & Morkoc, H 1998, Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation. in KT Tsen & HR Fetterman (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 3277, pp. 283-291, Ultrafast Phenomena in Semiconductors II, San Jose, CA, United States, 1/28/98. https://doi.org/10.1117/12.306166
Joshi RP, Tsen K-T, Ferry DK, Salvador A, Botcharev A, Morkoc H. Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation. In Tsen KT, Fetterman HR, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3277. 1998. p. 283-291 https://doi.org/10.1117/12.306166
Joshi, R. P. ; Tsen, Kong-Thon ; Ferry, D. K. ; Salvador, A. ; Botcharev, A. ; Morkoc, H. / Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation. Proceedings of SPIE - The International Society for Optical Engineering. editor / K.T. Tsen ; H.R. Fetterman. Vol. 3277 1998. pp. 283-291
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