Effects of boron doping on the surface morphology and structural imperfections of diamond films

X. H. Wang, G. H M Ma, Wei Zhu, J. T. Glass, L. Bergman, K. F. Turner, Robert Nemanich

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

This paper reports the surface morphology and structural imperfection of boron-doped diamond films prepared by microwave plasma enhanced chemical vapor deposition. It was found that boron dopants improved the structural quality of diamond films. The surface morphology consisted mainly of the {111} facets. A significant enhancement of nucleation density and consequent decrease of grain size was observed with the addition of diborane in the gas phase. Raman spectroscopy indicated that, with the introduction of boron dopants, the integrated intensity of the diamond peak at 1332 cm-1 increased relative to the intensity of the non-diamond peak at about 1500 cm-1, and the full-width at half maximum of the 1332 cm-1 peak decreased. In addition, the 1.681 eV (738 nm) photoluminescence peak related to point defects was effectively reduced, or even eliminated by the boron dopants. Finally, transmission electron microscopy studies found that the densities of planar defects (mainly stacking faults and microtwins) also decreased with the boron addition.

Original languageEnglish (US)
Pages (from-to)828-835
Number of pages8
JournalDiamond and Related Materials
Volume1
Issue number7
DOIs
StatePublished - May 1 1992
Externally publishedYes

Fingerprint

Boron
Diamond films
diamond films
Surface morphology
boron
Doping (additives)
Defects
defects
diborane
Diamond
Stacking faults
Point defects
Plasma enhanced chemical vapor deposition
Full width at half maximum
crystal defects
point defects
Raman spectroscopy
flat surfaces
Diamonds
Photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Effects of boron doping on the surface morphology and structural imperfections of diamond films. / Wang, X. H.; Ma, G. H M; Zhu, Wei; Glass, J. T.; Bergman, L.; Turner, K. F.; Nemanich, Robert.

In: Diamond and Related Materials, Vol. 1, No. 7, 01.05.1992, p. 828-835.

Research output: Contribution to journalArticle

Wang, X. H. ; Ma, G. H M ; Zhu, Wei ; Glass, J. T. ; Bergman, L. ; Turner, K. F. ; Nemanich, Robert. / Effects of boron doping on the surface morphology and structural imperfections of diamond films. In: Diamond and Related Materials. 1992 ; Vol. 1, No. 7. pp. 828-835.
@article{200b2d4b0ceb43bdb3ac82638e047bb9,
title = "Effects of boron doping on the surface morphology and structural imperfections of diamond films",
abstract = "This paper reports the surface morphology and structural imperfection of boron-doped diamond films prepared by microwave plasma enhanced chemical vapor deposition. It was found that boron dopants improved the structural quality of diamond films. The surface morphology consisted mainly of the {111} facets. A significant enhancement of nucleation density and consequent decrease of grain size was observed with the addition of diborane in the gas phase. Raman spectroscopy indicated that, with the introduction of boron dopants, the integrated intensity of the diamond peak at 1332 cm-1 increased relative to the intensity of the non-diamond peak at about 1500 cm-1, and the full-width at half maximum of the 1332 cm-1 peak decreased. In addition, the 1.681 eV (738 nm) photoluminescence peak related to point defects was effectively reduced, or even eliminated by the boron dopants. Finally, transmission electron microscopy studies found that the densities of planar defects (mainly stacking faults and microtwins) also decreased with the boron addition.",
author = "Wang, {X. H.} and Ma, {G. H M} and Wei Zhu and Glass, {J. T.} and L. Bergman and Turner, {K. F.} and Robert Nemanich",
year = "1992",
month = "5",
day = "1",
doi = "10.1016/0925-9635(92)90109-2",
language = "English (US)",
volume = "1",
pages = "828--835",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "7",

}

TY - JOUR

T1 - Effects of boron doping on the surface morphology and structural imperfections of diamond films

AU - Wang, X. H.

AU - Ma, G. H M

AU - Zhu, Wei

AU - Glass, J. T.

AU - Bergman, L.

AU - Turner, K. F.

AU - Nemanich, Robert

PY - 1992/5/1

Y1 - 1992/5/1

N2 - This paper reports the surface morphology and structural imperfection of boron-doped diamond films prepared by microwave plasma enhanced chemical vapor deposition. It was found that boron dopants improved the structural quality of diamond films. The surface morphology consisted mainly of the {111} facets. A significant enhancement of nucleation density and consequent decrease of grain size was observed with the addition of diborane in the gas phase. Raman spectroscopy indicated that, with the introduction of boron dopants, the integrated intensity of the diamond peak at 1332 cm-1 increased relative to the intensity of the non-diamond peak at about 1500 cm-1, and the full-width at half maximum of the 1332 cm-1 peak decreased. In addition, the 1.681 eV (738 nm) photoluminescence peak related to point defects was effectively reduced, or even eliminated by the boron dopants. Finally, transmission electron microscopy studies found that the densities of planar defects (mainly stacking faults and microtwins) also decreased with the boron addition.

AB - This paper reports the surface morphology and structural imperfection of boron-doped diamond films prepared by microwave plasma enhanced chemical vapor deposition. It was found that boron dopants improved the structural quality of diamond films. The surface morphology consisted mainly of the {111} facets. A significant enhancement of nucleation density and consequent decrease of grain size was observed with the addition of diborane in the gas phase. Raman spectroscopy indicated that, with the introduction of boron dopants, the integrated intensity of the diamond peak at 1332 cm-1 increased relative to the intensity of the non-diamond peak at about 1500 cm-1, and the full-width at half maximum of the 1332 cm-1 peak decreased. In addition, the 1.681 eV (738 nm) photoluminescence peak related to point defects was effectively reduced, or even eliminated by the boron dopants. Finally, transmission electron microscopy studies found that the densities of planar defects (mainly stacking faults and microtwins) also decreased with the boron addition.

UR - http://www.scopus.com/inward/record.url?scp=50749135055&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50749135055&partnerID=8YFLogxK

U2 - 10.1016/0925-9635(92)90109-2

DO - 10.1016/0925-9635(92)90109-2

M3 - Article

AN - SCOPUS:50749135055

VL - 1

SP - 828

EP - 835

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 7

ER -