Effects of annealing on amorphous Gdx Si1-x near the metal-insulator transition

E. Guillotel; L. Zeng; E. Helgren; F. Hellman; R. Islam; David Smith

doi:10.1063/1.2426921

Effects of annealing on amorphous Gdx Si1-x near the metal-insulator transition

E. Guillotel, L. Zeng, E. Helgren, F. Hellman, R. Islam, David Smith

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Annealing of amorphous Gd-Si films produces large changes in magnetic and magnetotransport properties. The materials have spin-glass freezing and enormous negative magnetoresistance (MR) in the unannealed state but show drastically reduced MR and magnetization on annealing. These changes can be explained by high resolution transmission electron micrographs and energy-dispersive x-ray analysis which show the appearance of nanocrystalline clusters of GdSi and Gd Si2 in an amorphous background. A comparison with the nonmagnetic analog Y-Si shows similar modification of electrical properties.

Original language	English (US)
Article number	023908
Journal	Journal of Applied Physics
Volume	101
Issue number	2
DOIs	https://doi.org/10.1063/1.2426921
State	Published - 2007

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2426921

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@article{f2d5db2afd4c4b7fbcfbdc05d0c8e5a9,

title = "Effects of annealing on amorphous Gdx Si1-x near the metal-insulator transition",

abstract = "Annealing of amorphous Gd-Si films produces large changes in magnetic and magnetotransport properties. The materials have spin-glass freezing and enormous negative magnetoresistance (MR) in the unannealed state but show drastically reduced MR and magnetization on annealing. These changes can be explained by high resolution transmission electron micrographs and energy-dispersive x-ray analysis which show the appearance of nanocrystalline clusters of GdSi and Gd Si2 in an amorphous background. A comparison with the nonmagnetic analog Y-Si shows similar modification of electrical properties.",

author = "E. Guillotel and L. Zeng and E. Helgren and F. Hellman and R. Islam and David Smith",

note = "Funding Information: We thank Robert Culbertson for assistance with RBS and gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. This research was supported by NSF DMR-0203907 and 0505524.",

year = "2007",

doi = "10.1063/1.2426921",

language = "English (US)",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Effects of annealing on amorphous Gdx Si1-x near the metal-insulator transition

AU - Guillotel, E.

AU - Zeng, L.

AU - Helgren, E.

AU - Hellman, F.

AU - Islam, R.

AU - Smith, David

N1 - Funding Information: We thank Robert Culbertson for assistance with RBS and gratefully acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. This research was supported by NSF DMR-0203907 and 0505524.

PY - 2007

Y1 - 2007

N2 - Annealing of amorphous Gd-Si films produces large changes in magnetic and magnetotransport properties. The materials have spin-glass freezing and enormous negative magnetoresistance (MR) in the unannealed state but show drastically reduced MR and magnetization on annealing. These changes can be explained by high resolution transmission electron micrographs and energy-dispersive x-ray analysis which show the appearance of nanocrystalline clusters of GdSi and Gd Si2 in an amorphous background. A comparison with the nonmagnetic analog Y-Si shows similar modification of electrical properties.

AB - Annealing of amorphous Gd-Si films produces large changes in magnetic and magnetotransport properties. The materials have spin-glass freezing and enormous negative magnetoresistance (MR) in the unannealed state but show drastically reduced MR and magnetization on annealing. These changes can be explained by high resolution transmission electron micrographs and energy-dispersive x-ray analysis which show the appearance of nanocrystalline clusters of GdSi and Gd Si2 in an amorphous background. A comparison with the nonmagnetic analog Y-Si shows similar modification of electrical properties.

UR - http://www.scopus.com/inward/record.url?scp=33847723013&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847723013&partnerID=8YFLogxK

U2 - 10.1063/1.2426921

DO - 10.1063/1.2426921

M3 - Article

AN - SCOPUS:33847723013

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 023908

ER -

Effects of annealing on amorphous Gdx Si1-x near the metal-insulator transition

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