1 Citation (Scopus)

Abstract

Significant attention has recently been given to photoluminescence (PL) spectra and lifetime measurements on InAs/InAsSb superlattices, as high quality optical material with long carrier lifetimes are required for infrared detectors. The standard sample structure for PL measurements includes energy barriers to block photo-generated carriers from being lost through non-radiative recombination at interfaces between the superlattice and the surface or between the superlattice and the buffer/substrate. However, defect, surface, and/or interface states in AlSb, a commonly used barrier material, are known to contribute carriers to InAs quantum wells. Due to the similarity of the AlSb interface with the InAs/InAsSb superlattice, the effects of the barriers on the electrical and optical properties of the superlattice were investigated. Structures with AlSb barriers at the top and bottom of the superlattice, with no AlSb barriers, and with an AlSb barrier only at the top of the superlattice structure were studied. Hall Effect measurements revealed little change in the sheet carrier concentration at 10 K due to the barriers, but significant increases in low temperature mobility and a two-dimensional-like mobility temperature dependence were observed when barriers were present. Further high magnetic field measurements are necessary, however, to understand the transport properties of these samples due to the likelihood that multiple carriers are present. The photoluminescence (PL) spectra were almost identical regardless of the barriers, except for a 15% increase in intensity with the AlSb barrier between the buffer layer and the superlattice. The surface AlSb barrier had little effect on the intensity. The barriers are therefore recommended for PL measurements to increase the signal intensity; however, they complicate the analysis of single-field Hall Effect measurements.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9451
EditionJanuary
DOIs
StatePublished - 2015
Event41st Conference on Infrared Technology and Applications - Baltimore, United States
Duration: Apr 20 2015Apr 23 2015

Other

Other41st Conference on Infrared Technology and Applications
CountryUnited States
CityBaltimore
Period4/20/154/23/15

Fingerprint

Superlattices
Material Properties
Materials properties
Photoluminescence
Infrared
Infrared radiation
Hall effect
Magnetic field measurement
Optical materials
Infrared detectors
Carrier lifetime
Interface states
Energy barriers
Surface defects
Buffer layers
Transport properties
Semiconductor quantum wells
Carrier concentration
photoluminescence
Hall Effect

Keywords

  • detector
  • Hall Effect
  • infrared
  • photoluminescence
  • superlattice

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Steenbergen, E. H., Lin, Z. Y., Elhamri, S., Mitchel, W. C., Zhang, Y-H., & Kaspi, R. (2015). Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties. In Proceedings of SPIE - The International Society for Optical Engineering (January ed., Vol. 9451). [945114] SPIE. https://doi.org/10.1117/12.2177696

Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties. / Steenbergen, Elizabeth H.; Lin, Zhi Yuan; Elhamri, Said; Mitchel, William C.; Zhang, Yong-Hang; Kaspi, Ron.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9451 January. ed. SPIE, 2015. 945114.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Steenbergen, EH, Lin, ZY, Elhamri, S, Mitchel, WC, Zhang, Y-H & Kaspi, R 2015, Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties. in Proceedings of SPIE - The International Society for Optical Engineering. January edn, vol. 9451, 945114, SPIE, 41st Conference on Infrared Technology and Applications, Baltimore, United States, 4/20/15. https://doi.org/10.1117/12.2177696
Steenbergen EH, Lin ZY, Elhamri S, Mitchel WC, Zhang Y-H, Kaspi R. Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties. In Proceedings of SPIE - The International Society for Optical Engineering. January ed. Vol. 9451. SPIE. 2015. 945114 https://doi.org/10.1117/12.2177696
Steenbergen, Elizabeth H. ; Lin, Zhi Yuan ; Elhamri, Said ; Mitchel, William C. ; Zhang, Yong-Hang ; Kaspi, Ron. / Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9451 January. ed. SPIE, 2015.
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abstract = "Significant attention has recently been given to photoluminescence (PL) spectra and lifetime measurements on InAs/InAsSb superlattices, as high quality optical material with long carrier lifetimes are required for infrared detectors. The standard sample structure for PL measurements includes energy barriers to block photo-generated carriers from being lost through non-radiative recombination at interfaces between the superlattice and the surface or between the superlattice and the buffer/substrate. However, defect, surface, and/or interface states in AlSb, a commonly used barrier material, are known to contribute carriers to InAs quantum wells. Due to the similarity of the AlSb interface with the InAs/InAsSb superlattice, the effects of the barriers on the electrical and optical properties of the superlattice were investigated. Structures with AlSb barriers at the top and bottom of the superlattice, with no AlSb barriers, and with an AlSb barrier only at the top of the superlattice structure were studied. Hall Effect measurements revealed little change in the sheet carrier concentration at 10 K due to the barriers, but significant increases in low temperature mobility and a two-dimensional-like mobility temperature dependence were observed when barriers were present. Further high magnetic field measurements are necessary, however, to understand the transport properties of these samples due to the likelihood that multiple carriers are present. The photoluminescence (PL) spectra were almost identical regardless of the barriers, except for a 15{\%} increase in intensity with the AlSb barrier between the buffer layer and the superlattice. The surface AlSb barrier had little effect on the intensity. The barriers are therefore recommended for PL measurements to increase the signal intensity; however, they complicate the analysis of single-field Hall Effect measurements.",
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