EFFECTS OF A THIN SiO2 LAYER ON THE FORMATION OF METAL-SILICON CONTACTS.

S. M. Goodnick, M. Fathipour, D. L. Ellsworth, C. W. Wilmsen

Research output: Contribution to journalConference article

40 Scopus citations

Abstract

The reactions that occur between different metals and silicon wafers with a thin oxide layer were studied. The oxides were formed by either exposing the chemically cleaned wafer to air at room temperature or by thermally growing 30 A of oxide at 700 degree C in dry O//2. Al, Pt, and Au contacts were investigated. The interfacial reactions before and after heat treatment at 400 degree C for 1 h were characterized using Auger and ESCA sputter profiling. The air grown oxides were found not to prevent intimate contact between the metal and the silicon, and reactions were observed for both heat treated and unheated samples. At 400 degree C the 30 A thermal oxide was found to be an effective diffusion barrier for Pt but less effective for Au. The Al reduced the 30 A of SiO//2 to form Al//2O//3 at the interface in what appeared to be a self-limiting reaction.

Original languageEnglish (US)
Pages (from-to)949-954
Number of pages6
JournalJournal of vacuum science & technology
Volume18
Issue number3
DOIs
StatePublished - Jan 1 1980
Externally publishedYes
EventProc of the Natl Symp of the Am Vac Soc, 27th, Pt 2 - Detroit, MI, Engl
Duration: Oct 13 1980Oct 17 1980

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'EFFECTS OF A THIN SiO<sub>2</sub> LAYER ON THE FORMATION OF METAL-SILICON CONTACTS.'. Together they form a unique fingerprint.

  • Cite this