Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111)

Hyeongtag Jeon, Bokhee Jung, Young Do Kim, Woochul Yang, Robert Nemanich

Research output: Contribution to journalArticle

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Abstract

This study examines the effects of a thin Ta interlayer on the formation of TiSi2 on Si(111) substrate. The Ta interlayer was introduced by depositing Ta and Ti films sequentially on an atomically clean Si(111) substrate in an ultrahigh vacuum (UHV) system. Samples of 100 Å Ti with 5 and 10 A Ta interlayers were compared to similar structures without an interlayer. After deposition, the substrates were annealed for 10 min, in situ, at temperatures between 500 and 750°C in 50°C increments. The TiSi2 formation with and without the Ta interlayer was analyzed with an X-ray diffractometer, Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and a four-point probe. The AES analysis data showed a 1:2 ratio of Ti:Si in the Ti-silicide layer and indicated that the Ta layer remained at the interface between TiSi2 and the Si(1111) substrate. The C 49-C 54 TiSi2 phase transition temperature was lowered by ∼200°C. The C 49-C 54 TiSi2 phase transition temperature was 550∼C for the samples with a Ta interlayer and was 750°C for the samples with no Ta interlayer. The sheet resistance of the Ta interlayered Ti suicide showed lower values of resistivity at low temperatures which indicated the change in phase transition temperature. The C 54 TiSi2 displayed different crystal orientation when the Ta interlayer was employed. The SEM and TEM micrographs showed that the TiSi2 with a Ta interlayer significantly suppressed the tendency to islanding and surface agglomeration.

Original languageEnglish (US)
Pages (from-to)2467-2471
Number of pages5
JournalJournal of Applied Physics
Volume88
Issue number5
StatePublished - Sep 2000
Externally publishedYes

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interlayers
transition temperature
Auger spectroscopy
electron spectroscopy
transmission electron microscopy
scanning electron microscopy
vacuum systems
agglomeration
diffractometers
ultrahigh vacuum
tendencies
electrical resistivity
probes
crystals
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111). / Jeon, Hyeongtag; Jung, Bokhee; Kim, Young Do; Yang, Woochul; Nemanich, Robert.

In: Journal of Applied Physics, Vol. 88, No. 5, 09.2000, p. 2467-2471.

Research output: Contribution to journalArticle

Jeon, H, Jung, B, Kim, YD, Yang, W & Nemanich, R 2000, 'Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111)', Journal of Applied Physics, vol. 88, no. 5, pp. 2467-2471.
Jeon, Hyeongtag ; Jung, Bokhee ; Kim, Young Do ; Yang, Woochul ; Nemanich, Robert. / Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111). In: Journal of Applied Physics. 2000 ; Vol. 88, No. 5. pp. 2467-2471.
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