Effects of a defected GaP/Si interface on a Si heterojunction interdigitated back contact (IBC) solar cell

Yongjie Zou; Chaomin Zhang; Christiana Honsberg; Stephen Goodnick

doi:10.1109/PVSC40753.2019.8981136

Effects of a defected GaP/Si interface on a Si heterojunction interdigitated back contact (IBC) solar cell

Yongjie Zou, Chaomin Zhang, Christiana Honsberg, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The current record Si heterojunction interdigitated back contact (SHJ-IBC) solar cell uses a thin a-Si layer for front passivation. With the anti-reflective coating removed, and the front a-Si layer replaced by a GaP, it can serve as a bottom cell for a monolithic III-V/Si tandem. However, a GaP/Si interface may have a high density of midgap states. Here we treat the midgap states as single-level acceptor-like and donor-like midgap traps, and investigate the impact of the traps on the IBC performance, and the potential role that a front surface field can play in passivating the two types of traps, using numerical simulation.

Original language	English (US)
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	339-343
Number of pages	5
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8981136
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: Jun 16 2019 → Jun 21 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	6/16/19 → 6/21/19

Keywords

GaP
front surface field
interdigitated back contact
interfacial traps
silicon
surface passivation

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC40753.2019.8981136

Cite this

Zou, Y., Zhang, C., Honsberg, C., & Goodnick, S. (2019). Effects of a defected GaP/Si interface on a Si heterojunction interdigitated back contact (IBC) solar cell. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 339-343). Article 8981136 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8981136

Effects of a defected GaP/Si interface on a Si heterojunction interdigitated back contact (IBC) solar cell. / Zou, Yongjie; Zhang, Chaomin; Honsberg, Christiana et al.
2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 339-343 8981136 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zou, Y, Zhang, C, Honsberg, C & Goodnick, S 2019, Effects of a defected GaP/Si interface on a Si heterojunction interdigitated back contact (IBC) solar cell. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8981136, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 339-343, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 6/16/19. https://doi.org/10.1109/PVSC40753.2019.8981136

Zou Y, Zhang C, Honsberg C , Goodnick S. Effects of a defected GaP/Si interface on a Si heterojunction interdigitated back contact (IBC) solar cell. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 339-343. 8981136. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8981136

Zou, Yongjie ; Zhang, Chaomin ; Honsberg, Christiana et al. / Effects of a defected GaP/Si interface on a Si heterojunction interdigitated back contact (IBC) solar cell. 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 339-343 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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abstract = "The current record Si heterojunction interdigitated back contact (SHJ-IBC) solar cell uses a thin a-Si layer for front passivation. With the anti-reflective coating removed, and the front a-Si layer replaced by a GaP, it can serve as a bottom cell for a monolithic III-V/Si tandem. However, a GaP/Si interface may have a high density of midgap states. Here we treat the midgap states as single-level acceptor-like and donor-like midgap traps, and investigate the impact of the traps on the IBC performance, and the potential role that a front surface field can play in passivating the two types of traps, using numerical simulation.",

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AB - The current record Si heterojunction interdigitated back contact (SHJ-IBC) solar cell uses a thin a-Si layer for front passivation. With the anti-reflective coating removed, and the front a-Si layer replaced by a GaP, it can serve as a bottom cell for a monolithic III-V/Si tandem. However, a GaP/Si interface may have a high density of midgap states. Here we treat the midgap states as single-level acceptor-like and donor-like midgap traps, and investigate the impact of the traps on the IBC performance, and the potential role that a front surface field can play in passivating the two types of traps, using numerical simulation.

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Effects of a defected GaP/Si interface on a Si heterojunction interdigitated back contact (IBC) solar cell

Abstract

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Conference

Keywords

ASJC Scopus subject areas

Access to Document

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