Effects of a defected GaP/Si interface on a Si heterojunction interdigitated back contact (IBC) solar cell

Yongjie Zou, Chaomin Zhang, Christiana Honsberg, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The current record Si heterojunction interdigitated back contact (SHJ-IBC) solar cell uses a thin a-Si layer for front passivation. With the anti-reflective coating removed, and the front a-Si layer replaced by a GaP, it can serve as a bottom cell for a monolithic III-V/Si tandem. However, a GaP/Si interface may have a high density of midgap states. Here we treat the midgap states as single-level acceptor-like and donor-like midgap traps, and investigate the impact of the traps on the IBC performance, and the potential role that a front surface field can play in passivating the two types of traps, using numerical simulation.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages339-343
Number of pages5
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
CountryUnited States
CityChicago
Period6/16/196/21/19

Keywords

  • GaP
  • front surface field
  • interdigitated back contact
  • interfacial traps
  • silicon
  • surface passivation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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