Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

Y. Fu, Y. T. Moon, F. Yun, Ü Özgür, J. Q. Xie, S. Doǧan, H. Morkoç, C. K. Inoki, T. S. Kuan, Lin Zhou, David Smith

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Abstract

We report on the reduction of threading dislocations in GaN overlayers grown by organometallic vapor phase epitaxy on micro-porous TiN networks. These networks were obtained by in situ annealing of thin Ti layers deposited in a metalization chamber, on the (0001) face of GaN templates. Observations by transmission electron microscopy indicate dislocation reduction by factors of up to 10 in GaN layers grown on TiN networks compared with the control GaN. X-ray diffraction shows that GaN grown on the TiN network has a smaller (102) plane peak width (4.6 arcmin) than the control GaN (7.8 arcmin). In low temperature photoluminescence spectra, a narrow excitonic full-width-at-half-maximum of 2.4 meV was obtained, as compared to 3.0 meV for the control GaN, confirming the improved crystalline quality of the overgrown GaN layers.

Original languageEnglish (US)
Article number043108
Pages (from-to)043108-1-043108-3
JournalApplied Physics Letters
Volume86
Issue number4
DOIs
StatePublished - Feb 24 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Fu, Y., Moon, Y. T., Yun, F., Özgür, Ü., Xie, J. Q., Doǧan, S., Morkoç, H., Inoki, C. K., Kuan, T. S., Zhou, L., & Smith, D. (2005). Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy. Applied Physics Letters, 86(4), 043108-1-043108-3. [043108]. https://doi.org/10.1063/1.1849833