Effectiveness of Ti, TiN, Ta, TaN, and W2N as barriers for the integration of low-k dielectric hydrogen silsesquioxane

Yuxiao Zeng, Stephen W. Russell, Andrew J. McKerrow, Linghui Chen, Terry Alford

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The application of Ti, Ta, TiN, TaN and W2N as diffusion barriers in low-k dielectric hydrogen silsesquioxane (HSQ) and tetraethylorthosilicate (TEOS) was investigated. The microstructure of the barrier layers was characterized using plane-view and cross-section transmission electron microscopy. The structural changes in the annealed barrier films detected by X-ray diffraction analysis.

Original languageEnglish (US)
Pages (from-to)221-230
Number of pages10
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number1
DOIs
StatePublished - Jan 2000

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Diffusion barriers
X ray diffraction analysis
Transmission electron microscopy
Hydrogen
Microstructure
Low-k dielectric

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Effectiveness of Ti, TiN, Ta, TaN, and W2N as barriers for the integration of low-k dielectric hydrogen silsesquioxane. / Zeng, Yuxiao; Russell, Stephen W.; McKerrow, Andrew J.; Chen, Linghui; Alford, Terry.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 1, 01.2000, p. 221-230.

Research output: Contribution to journalArticle

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