Effectiveness of Ti, TiN, Ta, TaN, and W2N as barriers for the integration of low-k dielectric hydrogen silsesquioxane

Yuxiao Zeng; Stephen W. Russell; Andrew J. McKerrow; Linghui Chen; Terry Alford

doi:10.1116/1.591176

Effectiveness of Ti, TiN, Ta, TaN, and W₂N as barriers for the integration of low-k dielectric hydrogen silsesquioxane

Yuxiao Zeng, Stephen W. Russell, Andrew J. McKerrow, Linghui Chen, Terry Alford

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The application of Ti, Ta, TiN, TaN and W₂N as diffusion barriers in low-k dielectric hydrogen silsesquioxane (HSQ) and tetraethylorthosilicate (TEOS) was investigated. The microstructure of the barrier layers was characterized using plane-view and cross-section transmission electron microscopy. The structural changes in the annealed barrier films detected by X-ray diffraction analysis.

Original language	English (US)
Pages (from-to)	221-230
Number of pages	10
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	1
DOIs	https://doi.org/10.1116/1.591176
State	Published - Jan 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Effectiveness of Ti, TiN, Ta, TaN, and W₂N as barriers for the integration of low-k dielectric hydrogen silsesquioxane. / Zeng, Yuxiao; Russell, Stephen W.; McKerrow, Andrew J. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 1, 01.2000, p. 221-230.

Research output: Contribution to journal › Article › peer-review

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AB - The application of Ti, Ta, TiN, TaN and W2N as diffusion barriers in low-k dielectric hydrogen silsesquioxane (HSQ) and tetraethylorthosilicate (TEOS) was investigated. The microstructure of the barrier layers was characterized using plane-view and cross-section transmission electron microscopy. The structural changes in the annealed barrier films detected by X-ray diffraction analysis.

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Effectiveness of Ti, TiN, Ta, TaN, and W₂N as barriers for the integration of low-k dielectric hydrogen silsesquioxane

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