The application of Ti, Ta, TiN, TaN and W2N as diffusion barriers in low-k dielectric hydrogen silsesquioxane (HSQ) and tetraethylorthosilicate (TEOS) was investigated. The microstructure of the barrier layers was characterized using plane-view and cross-section transmission electron microscopy. The structural changes in the annealed barrier films detected by X-ray diffraction analysis.
|Original language||English (US)|
|Number of pages||10|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jan 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering