Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization

D. Adams, R. L. Spreitzer, S. W. Russell, N. D. Theodore, Terry Alford, J. W. Mayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Cu(Ti 27 at.%) and Cu(Cr 26 at.%) codeposited on silicon dioxide substrates were annealed in a flowing NH 3 ambient at 400 - 600°C for 30 min. The Ti segregates to both the surface to form a TiN(O) layer and to the alloy/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The Cr seems to migrate only to the free surface to form a CrN x layer. A 45 nm - thick Al film was deposited after nitridation, whereupon a second anneal was performed to evaluate these nitride layers as diffusion barriers. It was found that the Ti-nitride was stable up to 500°C as compared to Cr-nitride at 600°C.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages231-236
Number of pages6
Volume337
StatePublished - 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

Other

OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/4/944/8/94

Fingerprint

Diffusion barriers
Metallizing
Nitrides
Copper
Nitridation
Thick films
Silicon Dioxide
Oxides
Silica
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Adams, D., Spreitzer, R. L., Russell, S. W., Theodore, N. D., Alford, T., & Mayer, J. W. (1994). Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization. In Materials Research Society Symposium - Proceedings (Vol. 337, pp. 231-236). Materials Research Society.

Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization. / Adams, D.; Spreitzer, R. L.; Russell, S. W.; Theodore, N. D.; Alford, Terry; Mayer, J. W.

Materials Research Society Symposium - Proceedings. Vol. 337 Materials Research Society, 1994. p. 231-236.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Adams, D, Spreitzer, RL, Russell, SW, Theodore, ND, Alford, T & Mayer, JW 1994, Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization. in Materials Research Society Symposium - Proceedings. vol. 337, Materials Research Society, pp. 231-236, Proceedings of the 1994 MRS Spring Meeting, San Francisco, CA, USA, 4/4/94.
Adams D, Spreitzer RL, Russell SW, Theodore ND, Alford T, Mayer JW. Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization. In Materials Research Society Symposium - Proceedings. Vol. 337. Materials Research Society. 1994. p. 231-236
Adams, D. ; Spreitzer, R. L. ; Russell, S. W. ; Theodore, N. D. ; Alford, Terry ; Mayer, J. W. / Effectiveness of nitride diffusion barriers in a self-encapsulated copper-based metallization. Materials Research Society Symposium - Proceedings. Vol. 337 Materials Research Society, 1994. pp. 231-236
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