Abstract
Cu(Ti 27 at.%) and Cu(Cr 26 at.%) codeposited on silicon dioxide substrates were annealed in a flowing NH 3 ambient at 400 - 600°C for 30 min. The Ti segregates to both the surface to form a TiN(O) layer and to the alloy/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The Cr seems to migrate only to the free surface to form a CrN x layer. A 45 nm - thick Al film was deposited after nitridation, whereupon a second anneal was performed to evaluate these nitride layers as diffusion barriers. It was found that the Ti-nitride was stable up to 500°C as compared to Cr-nitride at 600°C.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 231-236 |
| Number of pages | 6 |
| Volume | 337 |
| State | Published - 1994 |
| Event | Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994 |
Other
| Other | Proceedings of the 1994 MRS Spring Meeting |
|---|---|
| City | San Francisco, CA, USA |
| Period | 4/4/94 → 4/8/94 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials