EFFECTIVENESS OF CVD THIN FILM BACKSIDE GETTERING AND ITS INTERACTION WITH INTRINSIC GETTERING.

C. C.D. Wong, S. Hahn, F. A. Ponce, Z. U. Rek

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The effectiveness of CVD thin film backside gettering on n-type CZ silicon wafers for CMOS technology has been investigated using optical techniques for bulk microdefect analyses and transmission electron microscopy for interfacial structure study. The deposition of LPCVD polysilicon (500-2000 nm), silicon nitride (150 nm), or poly/nitride films on the backside of Si wafers was found to enhance the bulk precipitation. Bulk microdefect density increased as the thickness of polysilicon increased. At the polysilicon/silicon interface, no extended line defects from polysilicon were observed. Based on the results of minority carrier lifetime and oxide breakdown measurements, the best gettering efficiency was given by 1300 nm polysilicon backside gettering scheme.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages33-38
Number of pages6
ISBN (Print)0931837375, 9780931837371
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume71
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Wong, C. C. D., Hahn, S., Ponce, F. A., & Rek, Z. U. (1986). EFFECTIVENESS OF CVD THIN FILM BACKSIDE GETTERING AND ITS INTERACTION WITH INTRINSIC GETTERING. In Materials Research Society Symposia Proceedings (pp. 33-38). (Materials Research Society Symposia Proceedings; Vol. 71). Materials Research Soc. https://doi.org/10.1557/proc-71-33