TY - JOUR
T1 - Effective work function of Pt, Pd, and Re on atomic layer deposited HfO 2
AU - Gu, Diefeng
AU - Dey, Sandwip
AU - Majhi, Prashant
PY - 2006/8/31
Y1 - 2006/8/31
N2 - Platinum and Pd show a significant difference in work function on SiO 2 and high-K materials (HfO 2). The effective metal work functions for Pd, Pt, and Re on atomic layer deposited HfO 2, which are different from the vacuum work function and important for device threshold voltage control, are measured by the C-V method. The difference is attributed to the dipoles at the metal/ HfO 2 interface, which is a result of charge transfer across the interface. Moreover, the extracted charge neutrality level and screening parameter are correlated with the phase development, film stoichiometry, and density of interface states at the metal/high-K interface.
AB - Platinum and Pd show a significant difference in work function on SiO 2 and high-K materials (HfO 2). The effective metal work functions for Pd, Pt, and Re on atomic layer deposited HfO 2, which are different from the vacuum work function and important for device threshold voltage control, are measured by the C-V method. The difference is attributed to the dipoles at the metal/ HfO 2 interface, which is a result of charge transfer across the interface. Moreover, the extracted charge neutrality level and screening parameter are correlated with the phase development, film stoichiometry, and density of interface states at the metal/high-K interface.
UR - http://www.scopus.com/inward/record.url?scp=33747867228&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33747867228&partnerID=8YFLogxK
U2 - 10.1063/1.2336718
DO - 10.1063/1.2336718
M3 - Article
AN - SCOPUS:33747867228
SN - 0003-6951
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 8
M1 - 082907
ER -