Effective potentials and quantum fluid models: A thermodynamic approach

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21 Citations (Scopus)

Abstract

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. This approach leads to a modified Boltzmann equation with a quantum corrected force term and to quantum corrected fluid, or quantum hydrodynamic models. We present the quantum interaction of electrons with a gate oxide barrier potential and quantum hydrodynamic simulations of a resonant tunneling diode as application examples.

Original languageEnglish (US)
Pages (from-to)771-801
Number of pages31
JournalInternational Journal of High Speed Electronics and Systems
Volume13
Issue number3
DOIs
StatePublished - Sep 2003

Fingerprint

Hydrodynamics
Thermodynamics
Resonant tunneling diodes
Fluids
Boltzmann equation
Semiconductor devices
Oxides
Electrons

Keywords

  • Effective potentials
  • Quantum hydrodynamics
  • Quantum thermodynamics

ASJC Scopus subject areas

  • Media Technology
  • Electrical and Electronic Engineering

Cite this

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abstract = "We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. This approach leads to a modified Boltzmann equation with a quantum corrected force term and to quantum corrected fluid, or quantum hydrodynamic models. We present the quantum interaction of electrons with a gate oxide barrier potential and quantum hydrodynamic simulations of a resonant tunneling diode as application examples.",
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