Effective potential approach to modeling of 25 nm MOSFET devices

3 Scopus citations


We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential that takes into account the Hartree and the barrier contributions. We study the influence of the quantum effects on the device output current.

Original languageEnglish (US)
Pages (from-to)311-317
Number of pages7
JournalSuperlattices and Microstructures
Issue number3-6
Publication statusPublished - Sep 2003


  • Effective potentials
  • Quantum thermodynamics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Effective potential approach to modeling of 25 nm MOSFET devices. / Ringhofer, Christian; Ahmed, S. S.; Vasileska, Dragica.

In: Superlattices and Microstructures, Vol. 34, No. 3-6, 09.2003, p. 311-317.

Research output: Contribution to journalArticle