Effective potential approach to modeling of 25 nm MOSFET devices

Christian Ringhofer; S. S. Ahmed; Dragica Vasileska

doi:10.1016/j.spmi.2004.03.021

Effective potential approach to modeling of 25 nm MOSFET devices

Christian Ringhofer, S. S. Ahmed, Dragica Vasileska

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential that takes into account the Hartree and the barrier contributions. We study the influence of the quantum effects on the device output current.

Original language	English (US)
Pages (from-to)	311-317
Number of pages	7
Journal	Superlattices and Microstructures
Volume	34
Issue number	3-6
DOIs	https://doi.org/10.1016/j.spmi.2004.03.021
State	Published - Sep 2003

Keywords

Effective potentials
Quantum thermodynamics

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2004.03.021

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title = "Effective potential approach to modeling of 25 nm MOSFET devices",

abstract = "We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential that takes into account the Hartree and the barrier contributions. We study the influence of the quantum effects on the device output current.",

keywords = "Effective potentials, Quantum thermodynamics",

author = "Christian Ringhofer and Ahmed, {S. S.} and Dragica Vasileska",

note = "Funding Information: The authors would like to thank Prof. David K. Ferry for the valuable discussions during the course of the preparation of this manuscript. The financial support from the Office of Naval Research under Contract No. N00014-99-1-03-18 and the National Science Foundation under Contract Nos. ECS021-8008 and ECS-0214867 is greatly acknowledged. ",

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T1 - Effective potential approach to modeling of 25 nm MOSFET devices

AU - Ringhofer, Christian

AU - Ahmed, S. S.

AU - Vasileska, Dragica

N1 - Funding Information: The authors would like to thank Prof. David K. Ferry for the valuable discussions during the course of the preparation of this manuscript. The financial support from the Office of Naval Research under Contract No. N00014-99-1-03-18 and the National Science Foundation under Contract Nos. ECS021-8008 and ECS-0214867 is greatly acknowledged.

PY - 2003/9

Y1 - 2003/9

N2 - We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential that takes into account the Hartree and the barrier contributions. We study the influence of the quantum effects on the device output current.

AB - We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential that takes into account the Hartree and the barrier contributions. We study the influence of the quantum effects on the device output current.

KW - Effective potentials

KW - Quantum thermodynamics

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JO - Superlattices and Microstructures

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ER -

Effective potential approach to modeling of 25 nm MOSFET devices

Abstract

Keywords

ASJC Scopus subject areas

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