Effective potential approach to modeling of 25 nm MOSFET devices

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential that takes into account the Hartree and the barrier contributions. We study the influence of the quantum effects on the device output current.

Original languageEnglish (US)
Pages (from-to)311-317
Number of pages7
JournalSuperlattices and Microstructures
Volume34
Issue number3-6
DOIs
StatePublished - Sep 1 2003

Keywords

  • Effective potentials
  • Quantum thermodynamics

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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