Effective potential approach to modeling of 25 nm MOSFET devices

3 Scopus citations

Abstract

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential that takes into account the Hartree and the barrier contributions. We study the influence of the quantum effects on the device output current.

Original languageEnglish (US)
Pages (from-to)311-317
Number of pages7
JournalSuperlattices and Microstructures
Volume34
Issue number3-6
DOIs
Publication statusPublished - Sep 2003

Keywords

  • Effective potentials
  • Quantum thermodynamics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Effective potential approach to modeling of 25 nm MOSFET devices. / Ringhofer, Christian; Ahmed, S. S.; Vasileska, Dragica.

In: Superlattices and Microstructures, Vol. 34, No. 3-6, 09.2003, p. 311-317.

Research output: Contribution to journalArticle