8 Scopus citations

Abstract

Susceptor-assisted microwave annealing enables effective dopant activation, at low temperatures, in ion-implanted Si. Given similar thermal budgets for microwave annealing and rapid thermal annealing (RTA), sheet resistances of microwave annealed Si, with either B+ or P+ implants, are lower than the values obtained using RTA. The fraction of dopants activated is as high as 18% for B+ implants and 64% for P+ implants. Dopant diffusion is imperceptible after microwave annealing, but significant after RTA, for P+ implanted Si samples with the same dopant activation. Microwave annealing achieves such properties using shorter anneal times and lower peak temperatures compared to RTA.

Original languageEnglish (US)
Article number192103
JournalApplied Physics Letters
Volume103
Issue number19
DOIs
StatePublished - Nov 4 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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