Abstract

Transient annealing effects on the grain size, structure and morphology of B and As implanted films of polycrystalline silicon were determined by transmission electron microscopy. Originally, grains had a bimodal distribution of smaller equiaxed grains and larger columnar grains. The growth of both types of grains was described with a modified model for interfacial energy driven grain growth. Bend contours in annealed unimplanted films were not present in annealed ion implanted films due to formation of a cellular network structure in the grains.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Pages105-110
Number of pages6
Edition76
StatePublished - Dec 1 1985

Publication series

NameInstitute of Physics Conference Series
Number76
ISSN (Print)0373-0751

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Krause, S., Wilson, S. R., Paulson, W. M., & Gregory, R. B. (1985). EFFECT OF TRANSIENT ANNEALING ON GRAIN GROWTH AND STRUCTURE OF POLYCRYSTALLINE SILICON FILMS. In Institute of Physics Conference Series (76 ed., pp. 105-110). (Institute of Physics Conference Series; No. 76).