Effect of thermal ramping and annealing conditions on defect formation in oxygen implanted silicon-on-insulator material

Stephen Krause, J. C. Park, J. D. Lee, M. El-Ghor, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
Original languageEnglish (US)
Title of host publication1992 IEEE International SOI Conference, SOI 1992 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages80-81
Number of pages2
ISBN (Electronic)0780307763
DOIs
StatePublished - Jan 1 1992
Event1992 IEEE International SOI Conference, SOI 1992 - Ponte Vedra Beach, United States
Duration: Oct 6 1992Oct 8 1992

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Conference

Conference1992 IEEE International SOI Conference, SOI 1992
CountryUnited States
CityPonte Vedra Beach
Period10/6/9210/8/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Krause, S., Park, J. C., Lee, J. D., El-Ghor, M., & Roitman, P. (1992). Effect of thermal ramping and annealing conditions on defect formation in oxygen implanted silicon-on-insulator material. In 1992 IEEE International SOI Conference, SOI 1992 - Proceedings (pp. 80-81). [664804] (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.1992.664804