Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress

L. Liu, T. S. Kang, D. A. Cullen, L. Zhou, J. Kim, C. Y. Chang, E. A. Douglas, S. Jang, David Smith, S. J. Pearton, W. J. Johnson, F. Ren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of source field plates on AlGaN/GaN High Electron Mobility Transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55V to 155V and the critical voltage for off-state gate stress from 40V to 65V, relative to devices without the field plate. Transmission electron microscopy (TEM) was used to examine the degradation of the gate contacts and revealed the presence of cracking due to the inverse piezoelectric effect that appeared on both source and drain side of the gate edges. A thin oxide layer was observed between the Ni gate contact and the Semiconductor, and both Ni and oxygen diffused into the AlGaN layer after stress.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages41-49
Number of pages9
Volume41
Edition6
DOIs
StatePublished - 2011
EventState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 9 2011Oct 14 2011

Other

OtherState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/9/1110/14/11

Fingerprint

High electron mobility transistors
Piezoelectricity
Electric breakdown
Semiconductor materials
Transmission electron microscopy
Degradation
Oxides
Oxygen
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Liu, L., Kang, T. S., Cullen, D. A., Zhou, L., Kim, J., Chang, C. Y., ... Ren, F. (2011). Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress. In ECS Transactions (6 ed., Vol. 41, pp. 41-49) https://doi.org/10.1149/1.3629952

Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress. / Liu, L.; Kang, T. S.; Cullen, D. A.; Zhou, L.; Kim, J.; Chang, C. Y.; Douglas, E. A.; Jang, S.; Smith, David; Pearton, S. J.; Johnson, W. J.; Ren, F.

ECS Transactions. Vol. 41 6. ed. 2011. p. 41-49.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, L, Kang, TS, Cullen, DA, Zhou, L, Kim, J, Chang, CY, Douglas, EA, Jang, S, Smith, D, Pearton, SJ, Johnson, WJ & Ren, F 2011, Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress. in ECS Transactions. 6 edn, vol. 41, pp. 41-49, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting, Boston, MA, United States, 10/9/11. https://doi.org/10.1149/1.3629952
Liu L, Kang TS, Cullen DA, Zhou L, Kim J, Chang CY et al. Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress. In ECS Transactions. 6 ed. Vol. 41. 2011. p. 41-49 https://doi.org/10.1149/1.3629952
Liu, L. ; Kang, T. S. ; Cullen, D. A. ; Zhou, L. ; Kim, J. ; Chang, C. Y. ; Douglas, E. A. ; Jang, S. ; Smith, David ; Pearton, S. J. ; Johnson, W. J. ; Ren, F. / Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress. ECS Transactions. Vol. 41 6. ed. 2011. pp. 41-49
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