Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress

L. Liu, T. S. Kang, D. A. Cullen, L. Zhou, J. Kim, C. Y. Chang, E. A. Douglas, S. Jang, David Smith, S. J. Pearton, W. J. Johnson, F. Ren

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of source field plates on AlGaN/GaN High Electron Mobility Transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55V to 155V and the critical voltage for off-state gate stress from 40V to 65V, relative to devices without the field plate. Transmission electron microscopy (TEM) was used to examine the degradation of the gate contacts and revealed the presence of cracking due to the inverse piezoelectric effect that appeared on both source and drain side of the gate edges. A thin oxide layer was observed between the Ni gate contact and the Semiconductor, and both Ni and oxygen diffused into the AlGaN layer after stress.

Original languageEnglish (US)
Title of host publicationState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Pages41-49
Number of pages9
Edition6
DOIs
StatePublished - 2011
EventState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 9 2011Oct 14 2011

Publication series

NameECS Transactions
Number6
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/9/1110/14/11

ASJC Scopus subject areas

  • Engineering(all)

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