Effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films

J. O. Olowolafe, I. Rau, K. M. Unruh, C. P. Swann, Z. Jawad, Terry Alford

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The role of composition on the resistivity and thermal stability of reactively sputtered Ta-Si-N films have been studied using x-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C, for example, Ta0.24Si0.10N0.66, and Ta0.24Si0.12N0.64 remained amorphous and thermally stable for heat treatment up to 1100 °C. In-situ sheet resistance measurement showed that the resistivity of the alloys varies with composition and decreases with temperature; films with higher Ta/Si ratio have lower resistivity. The resistivity of the films, at 30 °C, was about 675 Ω-cm, 285 Ω-cm, and 135 Ω-cm and decreased to 61.5 Ω-cm, 22.5 Ω-cm, and 19.5 Ω-cm at 480 °C for Ta0.24Si0.12N0.64, Ta0.24Si0.10N0.66, and Ta0.28Si0.07N0.651 in that order. Our results indicate that the composition of Ta-Si-N films could be manipulated to obtain low resistivity films that could be used in device applications.

Original languageEnglish (US)
Pages (from-to)1399-1402
Number of pages4
JournalJournal of Electronic Materials
Volume28
Issue number12
DOIs
StatePublished - Dec 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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