Effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films

J. O. Olowolafe, I. Rau, K. M. Unruh, C. P. Swann, Z. Jawad, Terry Alford

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The role of composition on the resistivity and thermal stability of reactively sputtered Ta-Si-N films have been studied using x-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C, for example, Ta0.24Si0.10N0.66, and Ta0.24Si0.12N0.64 remained amorphous and thermally stable for heat treatment up to 1100 °C. In-situ sheet resistance measurement showed that the resistivity of the alloys varies with composition and decreases with temperature; films with higher Ta/Si ratio have lower resistivity. The resistivity of the films, at 30 °C, was about 675 Ω-cm, 285 Ω-cm, and 135 Ω-cm and decreased to 61.5 Ω-cm, 22.5 Ω-cm, and 19.5 Ω-cm at 480 °C for Ta0.24Si0.12N0.64, Ta0.24Si0.10N0.66, and Ta0.28Si0.07N0.651 in that order. Our results indicate that the composition of Ta-Si-N films could be manipulated to obtain low resistivity films that could be used in device applications.

Original languageEnglish (US)
Pages (from-to)1399-1402
Number of pages4
JournalJournal of Electronic Materials
Volume28
Issue number12
StatePublished - Dec 1999

Fingerprint

Thin films
thin films
Sheet resistance
electrical resistivity
Chemical analysis
Tantalum
Rutherford backscattering spectroscopy
Silicon
tantalum
Spectrometry
backscattering
x ray diffraction
Thermodynamic stability
heat treatment
thermal stability
Diffraction
Heat treatment
X rays
silicon
spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Olowolafe, J. O., Rau, I., Unruh, K. M., Swann, C. P., Jawad, Z., & Alford, T. (1999). Effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films. Journal of Electronic Materials, 28(12), 1399-1402.

Effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films. / Olowolafe, J. O.; Rau, I.; Unruh, K. M.; Swann, C. P.; Jawad, Z.; Alford, Terry.

In: Journal of Electronic Materials, Vol. 28, No. 12, 12.1999, p. 1399-1402.

Research output: Contribution to journalArticle

Olowolafe, JO, Rau, I, Unruh, KM, Swann, CP, Jawad, Z & Alford, T 1999, 'Effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films', Journal of Electronic Materials, vol. 28, no. 12, pp. 1399-1402.
Olowolafe JO, Rau I, Unruh KM, Swann CP, Jawad Z, Alford T. Effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films. Journal of Electronic Materials. 1999 Dec;28(12):1399-1402.
Olowolafe, J. O. ; Rau, I. ; Unruh, K. M. ; Swann, C. P. ; Jawad, Z. ; Alford, Terry. / Effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films. In: Journal of Electronic Materials. 1999 ; Vol. 28, No. 12. pp. 1399-1402.
@article{61610ebea4974ebe82325a080e9d3f62,
title = "Effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films",
abstract = "The role of composition on the resistivity and thermal stability of reactively sputtered Ta-Si-N films have been studied using x-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C, for example, Ta0.24Si0.10N0.66, and Ta0.24Si0.12N0.64 remained amorphous and thermally stable for heat treatment up to 1100 °C. In-situ sheet resistance measurement showed that the resistivity of the alloys varies with composition and decreases with temperature; films with higher Ta/Si ratio have lower resistivity. The resistivity of the films, at 30 °C, was about 675 Ω-cm, 285 Ω-cm, and 135 Ω-cm and decreased to 61.5 Ω-cm, 22.5 Ω-cm, and 19.5 Ω-cm at 480 °C for Ta0.24Si0.12N0.64, Ta0.24Si0.10N0.66, and Ta0.28Si0.07N0.651 in that order. Our results indicate that the composition of Ta-Si-N films could be manipulated to obtain low resistivity films that could be used in device applications.",
author = "Olowolafe, {J. O.} and I. Rau and Unruh, {K. M.} and Swann, {C. P.} and Z. Jawad and Terry Alford",
year = "1999",
month = "12",
language = "English (US)",
volume = "28",
pages = "1399--1402",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "12",

}

TY - JOUR

T1 - Effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films

AU - Olowolafe, J. O.

AU - Rau, I.

AU - Unruh, K. M.

AU - Swann, C. P.

AU - Jawad, Z.

AU - Alford, Terry

PY - 1999/12

Y1 - 1999/12

N2 - The role of composition on the resistivity and thermal stability of reactively sputtered Ta-Si-N films have been studied using x-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C, for example, Ta0.24Si0.10N0.66, and Ta0.24Si0.12N0.64 remained amorphous and thermally stable for heat treatment up to 1100 °C. In-situ sheet resistance measurement showed that the resistivity of the alloys varies with composition and decreases with temperature; films with higher Ta/Si ratio have lower resistivity. The resistivity of the films, at 30 °C, was about 675 Ω-cm, 285 Ω-cm, and 135 Ω-cm and decreased to 61.5 Ω-cm, 22.5 Ω-cm, and 19.5 Ω-cm at 480 °C for Ta0.24Si0.12N0.64, Ta0.24Si0.10N0.66, and Ta0.28Si0.07N0.651 in that order. Our results indicate that the composition of Ta-Si-N films could be manipulated to obtain low resistivity films that could be used in device applications.

AB - The role of composition on the resistivity and thermal stability of reactively sputtered Ta-Si-N films have been studied using x-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900 °C, for example, Ta0.24Si0.10N0.66, and Ta0.24Si0.12N0.64 remained amorphous and thermally stable for heat treatment up to 1100 °C. In-situ sheet resistance measurement showed that the resistivity of the alloys varies with composition and decreases with temperature; films with higher Ta/Si ratio have lower resistivity. The resistivity of the films, at 30 °C, was about 675 Ω-cm, 285 Ω-cm, and 135 Ω-cm and decreased to 61.5 Ω-cm, 22.5 Ω-cm, and 19.5 Ω-cm at 480 °C for Ta0.24Si0.12N0.64, Ta0.24Si0.10N0.66, and Ta0.28Si0.07N0.651 in that order. Our results indicate that the composition of Ta-Si-N films could be manipulated to obtain low resistivity films that could be used in device applications.

UR - http://www.scopus.com/inward/record.url?scp=0033280502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033280502&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033280502

VL - 28

SP - 1399

EP - 1402

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 12

ER -