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Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole
Muhammad Yusuf Ali,
Meng Tao
Research output
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Contribution to journal
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Article
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peer-review
43
Scopus citations
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Dive into the research topics of 'Effect of sulfur passivation of silicon (100) on Schottky barrier height: Surface states versus surface dipole'. Together they form a unique fingerprint.
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Physics & Astronomy
sulfur
100%
passivity
96%
dipoles
76%
silicon
56%
nickel
56%
metals
53%
aluminum
47%
electric potential
37%
Schottky diodes
36%
capacitance
27%
adsorption
26%
evaporation
26%
activation energy
25%
sensitivity
20%