Effect of sulfur passivation of silicon (100) on Schottky barrier height

Surface states versus surface dipole

Muhammad Yusuf Ali, Meng Tao

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Aluminum and nickel contacts were prepared by evaporation on sulfur-passivated n - and p -type Si (100) substrates. The Schottky diodes were characterized by current-voltage, capacitance-voltage, and activation-energy measurements. Due to the passivation of Si dangling bonds by S, surface states are reduced to a great extent and Schottky barriers formed by Al and Ni on Si (100) substrates show greater sensitivity to their respective work functions. Aluminum, a low work function metal, shows a barrier height of <0.11 eV on S-passivated n -type Si (100) and ∼0.80 eV on S-passivated p -type Si (100), as compared to 0.56 and ∼0.66 eV for nonpassivated n - and p -type Si (100), respectively. Nickel, a high work function metal, shows ∼0.72 and ∼0.51 eV on S-passivated n and p -type Si (100), respectively, as compared to ∼0.61 and ∼0.54 eV on nonpassivated n and p -type Si (100), respectively. Though a surface dipole forms due to the adsorption of S on Si (100), our experimental results indicate that the effect of surface states is the dominant factor in controlling the Schottky barrier height in these metal-Si systems.

Original languageEnglish (US)
Article number103708
JournalJournal of Applied Physics
Volume101
Issue number10
DOIs
StatePublished - 2007
Externally publishedYes

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passivity
sulfur
dipoles
silicon
nickel
metals
aluminum
electric potential
Schottky diodes
capacitance
evaporation
activation energy
adsorption
sensitivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Effect of sulfur passivation of silicon (100) on Schottky barrier height : Surface states versus surface dipole. / Ali, Muhammad Yusuf; Tao, Meng.

In: Journal of Applied Physics, Vol. 101, No. 10, 103708, 2007.

Research output: Contribution to journalArticle

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