Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy

Lin Shao, J. K. Lee, Y. Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, Terry Alford, J. W. Mayer, Peng Chen, S. S. Lau

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Abstract

We have investigated hydrogen diffusion in hydrogenated 〈100〉 Si/Si homoepitaxial structures, which were grown by molecular beam epitaxy at various temperatures. The substrate growth temperature can significantly affect the H diffusion behavior, with higher growth temperatures resulting in deeper H diffusion. For the Si/Si structure grown at the highest temperature of 800°C, H trapping occurs at the epitaxial Si/Si substrate interface, which results in the formation of (100) oriented microcracks at the interface. The mechanism of H trapping and the potential application of these findings for the development of a method of transferring ultrathin Si layers are discussed.

Original languageEnglish (US)
Article number126105
JournalJournal of Applied Physics
Volume99
Issue number12
DOIs
StatePublished - Jul 11 2006

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Shao, L., Lee, J. K., Wang, Y. Q., Nastasi, M., Thompson, P. E., Theodore, N. D., Alford, T., Mayer, J. W., Chen, P., & Lau, S. S. (2006). Effect of substrate growth temperatures on H diffusion in hydrogenated Si/Si homoepitaxial structures grown by molecular beam epitaxy. Journal of Applied Physics, 99(12), [126105]. https://doi.org/10.1063/1.2204330